BASELINE CMOS 170 PROCESS FLOW
Seq. Step No.	PROCESS STEP	SUB STEPS	TOOL / RECIPE	TARGET AND PROCESS SPEC	Notes
1	STARTING WAFERS		36 - 63 ohm-cm, p-type, <100>, 6"		10 wafers + 2 monitors (PCH, NCH)
2	INITIAL OXIDATION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning	Include 2 dummies for PM etch characterization
		b) Std. clean wafers	Sink 6	Piranha + 25/1 HF until dewet
		c) Dry oxidation	Tystar2, 2DRYOXA	Target = 250A       950C, 30 min; 20 min N2 annealing	Measure oxide thickness
3	ZERO LAYER PHOTO		ASML	Std. litho                Mask: COMBI	Defines ASML alignment PM marks
4	SCRIBE WAFERS		Diamond pen	Scribe numbers into the photoresist	Numbers will be etched into Si during the following etch
5	ZERO LAYER ETCH	a) Etch through oxide	Centura MxP+       recipe: MXP_OXSP_ETCH	250A oxide etch, monitor endpoint
		b) Etch marks into Si	Lam5 recipe: 5003	1200A Si etch
		c) Photoresist strip	Matrix	Std. 2 min O2 ash	Measure PM depth with ASIQ
6	PAD OXIDATION / NITRIDE DEPOSITION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Std. clean wafers	Sink8 + Sink 6	Piranha + 25/1 HF until dewet	Include NCH, PCH
		c) Dry oxidation	Tystar2, 2DRYOXA	Target = 250A       1000C, 21 min; 15 min N2 annealing	Measure oxide thickness on PCH, NCH
		d) Nitride deposition	Tystar9, 9SNITA	Target = 2200A             (~ 65min @ 800C)	Do not include PCH, NCH.                          Measure nitride thickness
7	N-WELL PHOTO		ASML	Std. litho                Mask: NWELL           Oven bake 1 hr
8	NITRIDE ETCH		Centura MxP+       recipe: MXP_NITRIDE_ME	Monitor endpoint	Measure oxide thickness on every wafer.                           Make sure to have sufficient blocking for the following implant
9	N-WELL IMPLANT		CORE Systems	Specie/Dose/Energy:  P, 1E13, 150keV	Include PCH
10	NITRIDE REMOVAL	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8 (MEMS)	Piranha
		c) Nitride wet etch	Sink7	160C fresh phosphoric acid ~4 hours
		d) Pad oxide wet etch	Sink8	5/1 BHF until dewet	Include PCH, NCH
11	PAD OXIDATION / NITRIDE DEPOSITION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Std. clean wafers	Sink8 + Sink 6	Piranha + 25/1 HF until dewet	Include NCH, PCH
		c) Dry oxidation	Tystar2, 2DRYOXA	Target = 250A       1000C, 21 min; 15 min N2 annealing	Measure oxide thickness on PCH, NCH
		d) Nitride deposition	Tystar9, 9SNITA	Target = 2200A                         (~ 65min @ 800C)	Do not include PCH, NCH.                          Measure nitride thickness
12	P-WELL PHOTO		ASML	Std. litho                Mask: PWELL           Oven bake 1 hr
13	NITRIDE ETCH		Centura MxP+       recipe: MXP_NITRIDE_ME	Monitor endpoint	Measure oxide thickness on every wafer.                           Make sure to have sufficient blocking for the following implant
14	P-WELL IMPLANT		CORE Systems	Specie/Dose/Energy:  B, 5E12, 60keV	Include NCH
15	NITRIDE REMOVAL	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8 (MEMS)	Piranha
		c) Nitride wet etch	Sink7	160C fresh phosphoric acid ~4 hours
		d) Pad oxide wet etch	Sink8	5/1 BHF until dewet	Include PCH, NCH
16	WELL DRIVE-IN	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Std. clean wafers	Sink8 + Sink 6	Piranha + 25/1 HF until dewet	Include NCH, PCH
		c) Well drive-in	Tystar2, 2WELLDR	1100C, 150 min; 15 min N2 annealing	Measure oxide thickness
		d) Oxide wet etch	Sink8	5/1 BHF until dewet	Measure Rs on PCH, NCH
17	PAD OXIDATION / NITRIDE DEPOSITION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Std. clean wafers	Sink8 + Sink 6	Piranha + 25/1 HF until dewet	Include NCH, PCH      and 2 dummies
		c) Dry oxidation	Tystar2, 2DRYOXA	Target = 250A       1000C, 21 min; 15 min N2 annealing	Measure oxide thickness on NCH
		d) Nitride deposition	Tystar9, 9SNITA	Target = 2200A                    (~ 65min @ 800C)	Include only PCH and the dummies.                          Measure nitride thickness
18	ACTIVE AREA PHOTO		ASML	Std. litho                Mask: ACTIVE           Use BARC if needed.   UVBAKE program U
19	NITRIDE ETCH		Centura MxP+       recipe: MXP_NITRIDE_ME	Monitor endpoint, allow some over etch	Measure oxide thickness on each wafer on the ACT measurement area
20	P-WELL FIELD IMPLANT PHOTO	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8	Piranha
		c) Lithography	ASML	Std. litho                Mask: PFIELD           Oven bake 1 hr	With thicker nitride film at step 17 (sufficient implant blocking), PFIELD mask could be substituted with PWELL mask
21	P-WELL FIELD IMPLANT		CORE Systems	Specie/Dose/Energy:  B, 2E13, 80keV
22	LOCOS OXIDATION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Photoresist strip	Matrix	Std. 2 min O2 ash
		c) Std. clean wafers	Sink8 + Sink 6	Piranha + 10 sec dip in 25/1 HF	Include NCH, PCH
		d) Wet oxidation	Tystar2, 2WETOXA	Target = 5500A       1000C, 120 min; 20 min N2 annealing	Measure oxide thickness on NCH + 3 work wafers
23	NITRIDE REMOVAL / PAD OXIDE REMOVAL	a) Oxide wet etch	Sink 6	10/1 HF for 60 sec	Etch thin oxide layer off from the top of the nitride film.           Include PCH.
		b) Nitride wet etch	Sink 7	160C fresh phosphoric acid ~4 hours	Measure pad oxide on ACT measurenet area to make sure nitride is gone
		c) Oxide wet etch	Sink 6	10/1 HF for 60 sec  (PCH dewet)	Etch pad oxide
		d) Oxide wet etch on NCH	Sink7	Fresh 5/1 BHF until dewet	Remove LOCOS from NCH
24	SACRIFICIAL OXIDATION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Std. clean wafers	Sink 6	Piranha + 10 sec dip into 25/1 HF	Include NCH, PCH
		c) Dry oxidation	Tystar2, 2DRYOXA	Target = 250A       900C, 40 min;                1 sec (meaning zero)         N2 annealing	Measure oxide thickness on ACT measurement area
25	SCREEN OXIDATION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Std. clean wafers	Sink 6	Piranha +  25/1 HF dip until NCH, PCH dewet	Include NCH, PCH
		c) Dry oxidation	Tystar2, 2DRYOXA	Target = 250A       900C, 40 min; 15 min N2 annealing	Measure oxide thickness on ACT measurement area
26	NMOS Vt IMPLANT PHOTO		ASML	Std. litho                Mask: PWELL           UVBAKE program J
27	NMOS Vt IMPLANT		CORE Systems	Specie/Dose/Energy:  BF2, 4E12, 50keV	Include NCH
28	PMOS Vt IMPLANT PHOTO	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8	Piranha
		c) Lithography	ASML	Std. litho                Mask: NWELL           UVBAKE program J
29	PMOS Vt IMPLANT		CORE Systems	Specie/Dose/Energy:  P, 2E12, 30keV	Include PCH
30	GATE OXIDATON / POLY DEPOSITION	a) TLC clean	Tystar1, 1TLCA	2 hrs of cleaning	Reserve poly deposition tube
		b) Photoresist strip	Matrix	Std. 2 min O2 ash
		c) Std. clean wafers	Sink8 + Sink 6	Piranha + dip in 25/1 HF until NCH, PCH dewet	Include NCH, PCH, Tox, Tpoly1, Tpoly2      p-type prime monitor wafers
		c) Gate oxidation	Tystar 1, 1THIN-OX	Target = 80A          850C, 30 min oxidation; 900C, 30 min N2 annea (RED: oxide thickness?)	Include NCH, PCH, Tox, Tpoly1, Tpoly2, plus 3 test dummies. Note: ALMACK Step25 in furnace process unless the pre-oxidation temp. is 450C
		d) Poly-Si depostion	Tystar 10, 10SUPLYA,	Target = 2500A          Dep. time ~ 28 min	Include Tpoly1, Tpoly2 and the test dummies
		e) Measurements	Sopra, Rudolph	Measure oxide thickness on Tox
			SCA	Measure Dit, Qox, Nsc, Ts on Tox
			Nanospec	Measure poly thickness on ACT+POLY measurement area
			4PTPRB	Strip oxide from NCH and PCH;                         measure Rs
31	POLY GATE PHOTO		ASML	Std. litho with BARC                Mask: POLY           UVBAKE program U	Include poly test dummies
32	POLY-Si ETCH	a) Poly etch	Lam5 recipe 5003	Monitor endpoint,          ~ 50% over etch	Etch through BARC + poly. Check overetch recipe in cmos161 process
		b) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink 8	Piranha	Check Poly-Si lines with SEM
33	PMOS LDD IMPLANT PHOTO		ASML	Std. litho                Mask: P+S/D           UVBAKE program J
34	PMOS LDD IMPLANT		CORE Systems	Specie/Dose/Energy:  BF2, 5E13, 10keV            +7 deg. tilt                       @ 0 orientation;                     BF2, 5E13, 10keV                      -7 deg. tilt                             @ 180 orientation	Include PCH, Tpoly1
35	NMOS LDD IMPLANT PHOTO	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8	Piranha
		c) Lithography	ASML	Std. litho                Mask: N+S/D           UVBAKE program J
36	NMOS LDD IMPLANT		CORE Systems	Specie/Dose/Energy:  As, 5E13, 30keV            +7 deg. tilt                       @ 0 orientation;                     As, 5E13, 30keV                      -7 deg. tilt                                  @ 180 orientation	Include NCH, Tpoly2
37	LDD SPACER DEPOSITION	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8 + Sink 6	Piranha	Include 3 dummies for oxide etch test
		c) TEOS deposition	P-5000; recipe AH-USG	Target = 4000A;  ~80A/sec dep. rate
		d) Annealing	Tystar 2; 2HIN2ANA	900C, 30 min	Measure TEOS thickness on ACT measurement area
38	LDD SPACER FORMATION		Centura MxP+       recipe: MXP_OXSP_ET_EP	Monitor endpoint, stop etch when it drops	Verify the completition of the etch by measuring 0A oxide on the ACT measurement area
39	P+ GATE & S/D PHOTO		ASML	Std. litho                Mask: P+S/D           UVBAKE program J
40	P+ GATE & S/D IMPLANT		CORE Systems	Specie/Dose/Energy:    B, 3E15, 20keV	Include PCH, Tpoly1
41	N+ GATE & S/D PHOTO	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8	Piranha
		c) Lithography	ASML	Std. litho                Mask: N+S/D           UVBAKE program J
42	N+ GATE & S/D IMPLANT		CORE Systems	Specie/Dose/Energy:    P, 3E15, 40keV	Include NCH, Tpoly2
43	BACK SIDE ETCH	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8	Piranha	Dehydrate wafers in 120C oven for 30 min.
		c) Coat wafers	SVGCOAT6		Coat front side
		d) Oxide wet etch	Sink8	5/1 BHF until backside dewet	Dip off native oxide
		e) Poly-Si etch	Lam5 recipe 5003	No overetch step	Etch to endpoint plus 10 sec
		f) Oxide wet etch	Sink8	5/1 BHF until backside dewet	Include NCH, PCH, Tpoly1, Tpoly2 to remove native oxide
44	GATE & S/D ANNEALING	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8 + Sink 6	Piranha	Include NCH, PCH, Tpoly1, Tpoly2
		c) RTA annealing	Heatpulse3, recipe 1050RTA6.RCP	450C 30sec,               900C 10sec,                1050C 5sec	Device chamber
		d) Measurement	4PTPRB	Measure Rs on NCH, PCH, Tpoly1, Tpoly2
45	SILICIDATION	a) Sputter etch	Novellus, recipe ETCHSTD	1 min etch	Sputter etch native oxide.                             Include a test wafer.
		b) Ti deposition	Novellus, recipe TI300STD	25 sec deposition	Measure Rs of Ti film
		c) RTA annealing	Heatpulse3, recipe 650RTA6.RCP	450C 20sec,             650C 15sec	Silicide chamber,              N2 atmosphere
		d) Wet etch Ti & TiN	Sink7	Remove unreacted Ti and TiN in fresh piranha	Measure field oxide thickness on a LOCOS area to verify the completition of the etch
46	PSG DEPOSITION & DENSIFICATION	a) Std. clean wafers	Sink 6	Piranha                             (NO HF dip)	Include PCH,                     Si and TiSi test wafers
		b) PSG deposition	P-5000 recipe AH-USG(?) would replace: Tystar11 recipe 11SDLTOA, 43 min. dep. @450C	Target = 7000A	Doped or undoped TEOS?
		c) RTA annealing	Heatpulse3, recipe 900RTA6.RCP               Can we keep the same annealing for the new TEOS?	450C 30sec,             900C 10sec	Silicide chamber,              N2 atmosphere.
		d) Measurement	Nanospec	Measure TEOS thickness on PCH	Measure LOCOS+TEOS thickness on a LOCOS measuement area
			4PTPRB	Remove oxide from PCH and measure Rs.
47	CONTACT PHOTO		ASML	Std. litho with BARC              Mask: CONT           UVBAKE program U
48	CONTACT ETCH	a) Contact etch	Centura MxP+       recipe: MXP_OXSP_ET_EP	Monitor endpoint, allow 15sec over etch after signal drops	Etching through BARC takes ~50-60 sec.
		b) Measurement	Manual probe	Check resistivity on each wafer's measurement area	(ACT+CONT)                    for active region (POLY+CONT)                            for poly region
49	METAL 1 DEPOSITION	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8 + Sink 6	Piranha + HF dip OR sputter etch in next step	Include a dummy.                 HF damages silicide
		c) Sputter etch	Novellus, recipe ETCHSTD	1 min etch	Sputter etch native oxide.                             Concern of junction leackage
		d) Al deposition	Novellus, recipe ?            2-step-Al-process or                 3-step with Ti liner	Target = 6000A	Measure Rs of Al film
50	METAL1 PHOTO		ASML	Std. litho with BARC              Mask: METAL1           UVBAKE program U
51	METAL1 ETCH	a) Al etch	Lam3 Standard recipe	allow 50% overetch
		b) Measurement	Manual probe	Check resistivity on each wafer's test area	R = infinity should be on a LOCOS area
52	SINTERING	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Rinse	Sink8	Rinse & Spin dry                 NO piranha or HF
		c) Sintering	Tystar 18 recipe H2SINT4A.018	20 min @ 400C
53	TESTING		Autoprobe	Test devices with 1 metal layer
54	DIELECTRIC DEPOSITION & PLANARIZATION	a) TEOS deposition	P-5000  recipe AH-USG	Target = 2um;                        ~ 80A/sec dep. rate	Measure total oxide thickness on MET2+VIA2 area before and after deposition; calculate dielectric thickness
		b) Planarization	CMP recipe 6IN.OXIDE	Target = 1um removal	Measure oxide thickness on MET2+VIA2 area after CMP
55	VIA1 PHOTO	a) Rinse wafers	Sink8	Rinse & Spin dry                 NO piranha or HF	Dehydrate wafers in 120C oven for 30 min.
		b) Lithography	ASML	Std. litho                Mask: VIA1           UVBAKE program U	Put down new PM marks and etch into the dielectric 1200A
56	VIA1 ETCH	a) Oxide etch	Centura MxP+       recipe: MXP_OXSP_ET_EP	Monitor endpoint, allow 15sec over etch after signal drops
		b) Measurement	Manual probe	Check resistivity on each wafer's test area	MET1+VIA measurement area
57	METAL 2 DEPOSITION	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Sputter etch	Novellus, recipe ETCHSTD	1 min etch
		c) Al deposition	Novellus, recipe ?            2-step-Al-process or                 Std. Al process	Target = 9000A	Measure Rs of Al film
58	METAL2 PHOTO		ASML	Std. litho with BARC              Mask: METAL2           UVBAKE program U
59	METAL2 ETCH	a) Al etch	Lam3 Standard recipe	allow 50% overetch	Pay attention to photoresist thickness
		b) Measurement	Manual probe	Check resistivity on each wafer's test area	MET3 measurement area
60	TESTING		Probe station	Test devices with 2 metal layers
61	DIELECTRIC DEPOSITION & PLANARIZATION	a) TEOS deposition	P-5000  recipe AH-USG	Target = 2um ???;                        ~ 80A/sec dep. rate	Measure total oxide thickness on MET3 area before and after deposition; calculate dielectric thickness
		b) Planarization              Do we need it??	CMP recipe 6IN.OXIDE	Target = 1um removal	Measure oxide thickness on MET3 area after CMP
62	VIA2 PHOTO	a) Rinse wafers	Sink8	Rinse & Spin dry                 NO piranha or HF	Dehydrate wafers in 120C oven for 30 min.
		b) Lithography	ASML	Std. litho                Mask: VIA2           UVBAKE program U	Think about the PM marks
63	VIA2 ETCH	a) Oxide etch	Centura MxP+       recipe: MXP_OXSP_ET_EP	Monitor endpoint, allow 15sec over etch after signal drops
		b) Measurement	Manual probe	Check resistivity on each wafer's test area	MET2+VIA2 measurement area
64	METAL 3 DEPOSITION	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Sputter etch	Novellus, recipe ETCHSTD	1 min etch
		c) Al deposition	Novellus, recipe ?            2-step-Al-process or                 Std. Al process	Target = 9000A	Measure Rs of Al film
65	METAL3 PHOTO		ASML	Std. litho with BARC              Mask: METAL3           UVBAKE program U
66	METAL3 ETCH	a) Al etch	Lam3 Standard recipe	allow 50% overetch	Pay attention to photoresist thickness
		b) Measurement	Manual probe	Check resistivity on each wafer's test area	MET3 measurement area
67	TESTING		Probe station	Test devices with 3 metal layers