BASELINE CMOS 180 STANDARD PROCESS FLOW with STI
Seq. Step No.	PROCESS STEP	SUB STEPS	TOOL / RECIPE	TARGET AND PROCESS SPEC	Notes
0	STARTING WAFERS		20-60 ohm-cm, p-type, <100>, 6"		5 wafers
1	INITIAL OXIDATION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning	Include 2 dummies for PM etch characterization
		b) Std. clean wafers	Sink 6	Piranha + 1/25 HF until dewet
		c) Dry oxidation	Tystar2, 2DRYOXA	Target = 250A 950C, 30 min; 20 min N2 annealing	Measure oxide thickness
2	ZERO LAYER PHOTO		ASML	Std. litho Mask: COMBI	Defines ASML alignment PM marks
3	SCRIBE WAFERS		Diamond pen	Scribe numbers into the photoresist	Numbers will be etched into Si during the following etch
4	ZERO LAYER ETCH	a) Etch through oxide	Centura MxP+ recipe: MXP_OXSP_ETCH	250A oxide etch
		b) Etch marks into Si	Lam5 recipe: 5003	1200A Si etch
		c) Photoresist strip	Matrix	2.5 min O2 ash
		d) Measure etch depth	ASIQ	Measure PM depth with ASIQ
		d) Standard cleaning	Sink8
5	Mix&Match Zero LAYER PHOTO		ASML	Std. litho Mask: COMBI2 UVBAKE pr U	Defines GCA alignment marks
6	Mix&Match Zero LAYER ETCH	a) Etch through oxide	Centura MxP+ recipe: MXP_OXSP_ETCH	250A oxide etch
		b) Etch marks into Si	Lam5 recipe: 5003
		c) Photoresist strip	Matrix	2.5 min O2 ash
		d) Measure etch depth	ASIQ	Measure PM depth with ASIQ
7	PAD OXIDATION / NITRIDE DEPOSITION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Std. clean wafers	Sink8 + Sink 6	Piranha + 1/25 HF until dewet	Include NCH, PCH
		c) Dry oxidation	Tystar2, 2DRYOXA	Target = 250A 1000C, 21 min; 15 min N2 annealing	Measure oxide thickness on PCH, NCH
		d) Nitride deposition	Tystar9, 9SNITA	Target = 2200A	Do not include PCH, NCH. Measure nitride thickness
8	N-WELL PHOTO		ASML	Std. litho Mask: NWELL UVBAKE program J
9	NITRIDE ETCH		Centura MxP+ recipe: MXP_NITRIDE_OE	Monitor endpoint	Measure oxide thickness on every wafer. Make sure to have sufficient blocking for the following implant
10	N-WELL IMPLANT		CORE Systems	Specie/Dose/Energy: P, 1E13, 50keV for STI	Include PCH
11	NITRIDE REMOVAL	a) Photoresist strip	Matrix	Std. 2,5 min O2 ash
		b) Std. clean wafers	Sink8	Piranha
		c) Nitride wet etch	Sink7	160C fresh phosphoric acid ~4 hours
		d) Pad oxide wet etch	Sink8	1/5 BHF until dewet	Include PCH, NCH
12	PAD OXIDATION / NITRIDE DEPOSITION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Std. clean wafers	Sink8 + Sink 6	Piranha + 1/25 HF until dewet	Include NCH, PCH
		c) Dry oxidation	Tystar2, 2DRYOXA	Target = 250A 1000C, 21 min; 15 min N2 annealing	Measure oxide thickness on PCH, NCH
		d) Nitride deposition	Tystar9, 9SNITA	Target = 2200A	Do not include PCH, NCH. Measure nitride thickness
13	P-WELL PHOTO		ASML	Std. litho Mask: PWELL UVBAKE pr. J
14	NITRIDE ETCH		Centura MxP+ recipe: MXP_NITRIDE_OE	Monitor endpoint	Measure oxide thickness on every wafer. Make sure to have sufficient blocking for the following implant
15	P-WELL IMPLANT		CORE Systems	Specie/Dose/Energy: B, 5E12, 20keV	Include NCH
16	NITRIDE REMOVAL	a) Photoresist strip	Matrix	Std. 2 min O2 ash
		b) Std. clean wafers	Sink8	Piranha
		c) Nitride wet etch	Sink7	160C fresh phosphoric acid ~4 hours
		d) Pad oxide wet etch	Sink8	1/5 BHF until dewet	Include PCH, NCH
17	WELL DRIVE-IN	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Std. clean wafers	Sink8 + Sink 6	Piranha + 1/25 HF until dewet	Include NCH, PCH
		c) Well drive-in	Tystar2, 2WELLDR	1100C, 150 min; 15 min N2 annealing	Measure oxide thickness
		d) Oxide wet etch	Sink8	1/5 BHF until dewet	Measure Rs on PCH, NCH
18	PAD OXIDATION / NITRIDE DEPOSITION	a) TLC clean	Tystar2, 2TLCA	2 hrs of cleaning
		b) Std. clean wafers	Sink8 + Sink 6	Piranha + 1/25 HF until dewet	Include NCH, PCH and 2 dummies
		c) Dry oxidation	Tystar2, 2DRYOXA	Target = 250A 1000C, 21 min; 15 min N2 annealing	Measure oxide thickness on NCH
		d) Nitride deposition	Tystar9, 9SNITA	Target = 2200A	Include only PCH and the dummies. Measure nitride thickness