Step 13A. P-Well photo on ASML W#1-10
|
Step
|
Process |
Date |
Operator |
|
13A.1 |
ASML is down, all the wafers were exposed by GCAWS6, using the Mix&Match marks |
06/29/07 |
Pongracz |
Step 13B. P-Well photo on GCAWS6 W#11-15
|
Step
|
Process |
Date |
Operator |
|
13B.1 |
Std. I-line litho. W#1-15 SVGCOAT6: 1,3,3 GCAWS6: PWELL reticle, MIXMATCH job, Exposure time 3 s (big open areas need long exposure time) target coordinates at (-0.1129, 4.6982), dropout dies (2,6) (2,9) (7,2) (7,12) (14,6) (14,9) using global and local uDFAS alignment Include test wafers for nitride etch SVGDEV6: 3,3,9 Note: Patterned wafers are not entirely covered by developer, semi manual developing UVSCOPE UVBAKE, pr.J |
06/29/07 |
Pongracz |