Step 17. Well drive-in

 

 

Step

 

Process

Date

Operator

 

17.1

 

 

TLC clean Tystar2  2TLCA

2 hours of cleaning

 

07/13/07

Pongracz

 

17.2

 

 

Std. clean wafers in Sink8 and then Sink6

Piranha clean

1/25 HF dip until dewet (~ 2.5 min)

 

Include NCH, PCH

 

07/13/07

 

17.3

 

 

Well drive in Tystar2          2WELLDR

1100 oC, 150 min.; N2 annealing 15 min

Measure oxide thickness with Nanoduv

 

T

C

F

R

L

NCH

2085.7

2093.2

2096.2

2096.1

2093.1

PCH

2036

2043

2044

2043

2042

W#1

2050

2053.7

2053.4

2053.9

2052.5

W#15

2078.8

2086.6

2088.1

2083.4

2082

 

 

07/13/07

 

17.4

 

 Oxide wet etch

Sink 8

5:1 BHF until dewet

07/31/07

17.5

Measure Rs with 4ptprb:

NCH: 460 Ohm/sq

PCH: 476 Ohm/sq

07/31/07