Step 21B. Oxide liner growth
|
Step |
Process |
Date |
Operator |
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|
21B.1 |
TLC clean Tystar2 2TLCA 2 hours of cleaning
|
08/09/07 |
Pongracz |
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|
21B.2 |
Std. clean wafers in Sink8 and then Sink6 Piranha clean 1/25 HF dip until NCH dewet (~ 2.5 min) Include a test wafer |
08/09/07 |
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|
21.B |
Dry oxidation in Tystar2 2DRYOXA Target = 250A 1000 oC, 21 min.; N2 annealing 15 min Measure oxide thickness with Nanospec
|
08/09/07 |