Step 23B. Dielectric planarization

Step

Process

Date

Operator

23B.1

CMP Recipe 6ox6

Target=2um TEOS removal

Changing CMP pad to avoid cross contamination

Using test wafer to check removal rate and uniformity

Recipe 6ox6, removal rate apprx. 2000A/min

W#6: 180+180+180+180+90 s

W#7-10: 180+180+180+90 s

Local and global non-uniformity

Overpolishing is necessary to remove all the oxide from the active area

Polish until the nitride begins to change color everywhere.

Clean it in SinkCMP, sponge, ultrasonic bath

Sink 8 Piranha clean

08/13/07

-

08/14/07

Pongracz

23B.2

Measure nitride thickness with Nanoduv:

	T	C	F	L	R
W#6	1472	1535	1278	1568	1366
W#7	1987	1897	1783	1894	1828
W#8	1849	1877	1711	1702	1675
W#9	1966	1962	1775	1854	1755
W#10	1852	1940	1660	1981	1709

Initial nitride thickness was 2200 A

08/13/07