Step 26. Screen oxidation

Step

Process

Date

Operator

26.1

TLC clean Tystar2 2TLCA

2 hours of cleaning

08/20/07

Pongracz

26.2

Std. clean wafers in Sink6

Piranha clean

1/10 HF dip for 60 s

Include NCH, PCH

08/20/07

26.3

Dry oxidation in Tystar2 2DRYOXA

Target = 250A

900 ^oC, 40 min.; N₂ annealing 15 min

Measure oxide thickness with Nanospec vs Nanoduv results

Nanospec	T	C	F	R	L
NCH	144	142	158	149	141
Nanoduv	T	C	F	R	L
NCH	167	173	192	151	192
PCH	179	171	195	160	187
W#9	189	185	219	210	174
W#10	160	166	186	161	171
W#11	176	174	204	173	202
W#15	177	193	204	184	208

LOCOS area: 4034 A of oxide (150 nm was removed with HF dips)

08/20/07