Step 29A. P Vt
implant photo on ASML W#1-10
|
Step
|
Process |
Date |
Operator |
|
29A.1 |
Photoresist removal in Matrix 2.5 min ashing Sink 8 Piranha clean |
08/30/07 |
Pongracz |
|
29A.2 |
Std. DUV litho. W#1-10 SVGCOAT6: 1,2,1 ASML: NWELL (Image 1) on CMOS180C reticle, -0.5 deg wafer rotation W#1-5 26 mJ, -1 um W#6-10 25 mJ, -1um SVGDEV6: 1,1,9 UVSCOPE UVBAKE, pr.J |
08/30/07 |
Step 27B. P Vt
photo on GCAWS6 W#11-15
|
Step
|
Process |
Date |
Operator |
|
29B.1 |
Photoresist removal in Matrix 2.5 min ashing Sink
8 Piranha clean |
08/30/07 |
Pongracz |
|
29B.2 |
Std. I-line litho. W#11-15 SVGCOAT6: 1,3,3 GCAWS6: NWELL reticle, MIXMATCH job, target coordinates at (-0.1129, 4.6982), dropout dies (2,6) (2,9) (7,2) (7,12) (14,6) (14,9) using global and local uDFAS alignment W#11-15 2.4s exposure time Gobal alignement rejected multiple times before accepted SVGDEV6: 3,3,9 UVSCOPE UVBAKE, pr.J |
08/31/07 |