Step 33. Poly gate etch
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Step 33
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Process |
Date |
Operator |
|
33.1
|
Poly gate etch in Lam5 Note: new Lam5 software Note: no BARC etch in Centura-MxP Recipe: pongracz_5963_poly_ob_me_ep_oe_hi (oxide breakthrough, main etch with automatic endpoint, 50% high selectivity overetch) 40-45 s main etch, 50% overetch
|
09/28/07 - 10/04/07 |
Pongarcz |
|
33.2
|
Photoresist ashing in MATRIX for 2.5 min Sink8 Piranha clean 1/100 HF dip for 60s in Sink7 |
09/28/07 - 10/04/07 |