Step 36A. NMOS LDD implant photo on ASML W#1-10

Step	Process	Date	Operator
36A.1	Ashing photoresist in Matrix, 2.5 min Sink8 Piranha clean Std. DUV litho. W#1-10 SVGCOAT6: 1,2,1 ASML: NSELECT on CMOS180C reticle, -0.5 deg wafer rotation W#1-10 26 mJ, -1 um, Rx=0.2, Ry=2.6 SVGDEV6: 1,1,9 UVSCOPE UVBAKE, pr.J	10/15/07	Pongracz

Step 36B. NMOS LDD implant photo on GCAWS6 W#11-15

Step	Process	Date	Operator
36B.1	Ashing photoresist in Matrix, 2.5 min Sink8 Piranha clean Std. I-line litho. W#11-15 SVGCOAT6: 1,3,3 GCAWS6: PSELECT reticle, MIXMATCH job, target coordinates at (-0.1129, 4.6982), dropout dies (2,6) (2,9) (7,2) (7,12) (14,6) (14,9) using global and local uDFAS alignment W#13 2.7s exposure time W#11,12,14,15 2.5s exposure time W#11 has 4 DxD errors SVGDEV6: 3,3,9 UVSCOPE UVBAKE, pr.J	10/16/07	Pongracz