Step 38. LDD spacer deposition

 

 

Step

 

Process

Date

Operator

 

38.1

 

 

Wafer cleaning

 

Remove PR in O2 plasma 2.5 min ashing in Matrix

Std. clean wafers in sink8 and sink6 piranha

Include 3 dummies for oxide etch test, 3  patterned dummies for SEM cross sectioning

 

10/22/07

Pongracz

38.2

TEOS deposition in P-5000:

Dep. rate is 80A/min, target thickness is 4000A.
Dep. time: 50 sec

10/22/07

38.3

Annealing in Tystar2:

Standard wafer clean in Sink8&6 Piranha

Recipe 2HIN2ANA, 900C, 30 min.

10/22/07

38.4

TEOS thickness after annealing measured by Nanospec

T

C

F

L

R

3910

3832

3835

3924

3839



10/22/07