Step 39. LDD spacer formation

Step	Process	Date	Operator
39.1	TEOS oxide etch in Centura-MxP+: Recipe: MXP_OXSP_ETCH_EP Blank wafer etch rate: 3000 A/min (78 s) Patterned test wafer etch rate: 2900 A/min (81.2 s) Manual endpoint patterned test wafer Preparing patterned test wafer for SEM cross sectioning: Deposit poly in Tystar10 10SUPLYA target 2500A Cross section poly test lines SEM image Manual endpoint etch when endpoint signal drops. Etch time 77-81.5 sec. No oxide could be measured on active area.	10/23/07 - 10/25/07	Pongracz