Step 4. Zero layer etch

Step 4	Process	Date	Operator
4.1	Etch PM marks into Si: a) Initial oxide etch in CENTURA-MXP+ MXP_OXSP_ETCH for 10 s b) Si etch in LAM5: recipe 5003, 20s+20% o.e. Note: The area close to the flat wasn’t etched in Lam5, wafer scribing needs to be done again before next etch step	05/11/07	Pongarcz
4.2	Photoresist ashing in MATRIX for 2.5 min PM depth measurement with ASIQ: W#1 1320A, W#5 1340A, W#7 1360A, W#10 1470A, W#15 1320A Sink8 Piranha clean before next lithography step	05/14/07