Step 40A. P+ gate S/D implant photo on ASML W#1-10

Step	Process	Date	Operator
40A.1	Sink8 Piranha clean Std. DUV litho. W#1-10 SVGCOAT6: 1,2,1 ASML: PSELECT on CMOS180C reticle, -0.5 deg wafer rotation W#1-10 26 mJ, -0.3 um SVGDEV6: 1,1,9 UVSCOPE UVBAKE, pr.J	10/26/07	Pongracz

Step 40B. P+ gate S/D implant photo on GCAWS6 W#11-15

Step	Process	Date	Operator
40B.1	Sink8 Piranha clean Std. I-line litho. W#11-15 SVGCOAT6: 1,3,3 GCAWS6: PSELECT reticle, MIXMATCH job, target coordinates at (-0.1129, 4.6982), dropout dies (2,6) (2,9) (7,2) (7,12) (14,6) (14,9) using global and local uDFAS alignment W#11-15 exp time 2.5s PEB bake on SVGDEV6 Manual developing for 60s (developer track was under repair) UVSCOPE UVBAKE, pr.J	10/29/07	Pongracz