Step 45. Gate & S/D Annealing

Step	Process	Date	Operator
45.1	Clean wafers in Sink8 and Sink6 piranha. No HF dip. Test wafers NCH, PCH, Tpoly1, Tpoly2 included.	01/23/08	Petho
45.2	RTA annealing in Heatpulse3 using BL_1050.RCP recipe (30sec @ 450C, 10sec @ 900C, 5sec @ 1050C in N2 atmosphere, device chamber)	01/23/08	Petho
45.3	4 point probe measurement on test wafers: NCH: 52.6 Ohm/sq PCH: 63.9 Ohm/sq Tpoly1: 129.4 Ohm/sq Tpoly2: 211 Ohm/sq	01/23/08	Petho