Step 46. Silicidation

 

 

Step

 

Process

Date

Operator

46.1

 

Sputter etch native oxide in Novellus using ETCHSTD recipe for 1 min. Dummy wafers included.

 

02/04/08

Petho

46.2

 

Ti deposition in Novellus using TI300STD recipe for 25 sec.
Target: 300 A

 

02/04/08

Petho

46.3

 

RTA annealing in Heatpulse3 using BL_650.RCP
(20sec @ 450C, 15sec @ 650C in N2 atmosphere, silicide chamber)

Short loop measurements:
  Rsq on deposited Ti: 32-34 Ohm/sq
  Rsq on Ti after anneal: 20-21 Ohm/sq
  Ti thickness after anneal: ~240 A
  Rsq on oxide: 1-2 KOhm/sq

 

02/04/08

Petho

 46.4

Wet etch Ti in Sink7 fresh piranha for 45 sec.
HF dips applied to remove residual TiN and TiSi.
  LOCOS: 120 sec in 200:1 HF
  STI: 60 sec in 25:1 HF

Resistivity measurements

5-pt average of LOCOS thickness on #1 by Nanospec: 3070.8 A

 

08/15/08

 

Petho