Step 6. Mix&Match zero layer etch

  

 

Step 6.

 

Process

Date

Operator

 

6.1

 

 

Etch marks into Si:

 

 a)      Initial oxide etch in CENTURA-MXP      MXP_OXSP_ETCH for 10 s

b)      Si etch in LAM5: recipe 5003, no overetch

 

Wafer #

Target

Main etch time

  1,          6,          11

1200

20 s

2, 3,      7, 8,     12, 13

3000

52 s

4, 5,      9, 10,   14, 15

5000

85 s

 

05/15/07

Pongracz

 

6.2

 

 

Photoresist ashing in MATRIX for 2.5 min

 

Depth measurement (ASIQ):

W#1: 1560A, W#2 3200A, W#4 4950A

 

 

05/15/07