Step 8A. N-Well photo on ASML W#1-10

Step	Process	Date	Operator
8A.1	Std. DUV litho. W#1-10 SVGCOAT6: 1,2,1 ASML: NWELL on CMOS180C reticle, 25mJ, 0 um focus, -0.5 deg wafer rotation Include test wafers for nitride etch and Si wafers to measure resist thickness SVGDEV6: 1,1,9 UVSCOPE Note: Developer nozzle needed to be adjusted, W#1-4 reworked UVBAKE, pr.J Resist thickness on dummy Si measured by Nanoduv C 6380A T 6479A F 6493A L 6518A R 6490A	05/29/07	Pongracz

Step 8B. N-Well photo on GCAWS6 W#11-15

Step	Process	Date	Operator
8B.1	Std. I-line litho. W#11-15 SVGCOAT6: 1,3,3 GCAWS6: NWELL reticle, MIXMATCH job, Exposure time 2.2 s target coordinates at (-0.1129, 4.6982), dropout dies (2,6) (2,9) (7,2) (7,12) (14,6) (14,9) using global and local uDFAS alignment Include test wafers for nitride etch and Si wafers to measure resist thickness SVGDEV6: 3,3,9 Note: Underdeveloped, semi-manual developing UVSCOPE UVBAKE, pr.J	05/30/07	Pongracz