Step 12. Pad oxidation/Nitride deposition

Step

Process

Date

Operator

12.1

TLC clean Tystar2 2TLCA

2 hours of cleaning

06/19/07

Pongracz

12.2

Std. clean wafers in Sink8 and then Sink6

Piranha clean

1/25 HF dip until NCH dewet (~ 2.5 min)

Include NCH, PCH and dummy wafers for nitride etch

06/19/07

12.3

Dry oxidation in Tystar2 2DRYOXA

Target = 250A

1000 ^oC, 21 min.; N₂ annealing 15 min

Measure oxide thickness with Nanoduv pr.1.:

	T	C	F	R	L
NCH	237	249	267	263	240
PCH	260	271	289	278	261

06/19/07

12.4

Nitride deposition in Tystar9 9SNITA on test wafer – particles

Sink6 Piranha clean

Tystar9 9SNITA 65 min @ 800 ^oC

Test run – 2-3 particles/wafer after SRD

1^st run: W#1-8 + 2 test wafer

2^nd run: W#9-15 +2 test wafer

NCH, PCH not included

Measure nitride on oxide with Nanoduv pr.6:

	T	C	F	R	L
W#1	2141	2090	2128	2123	2130
W#3	2187	2123	2160	2145	2199
W#5	2231	2162	2160	2182	2212
W#7	2259	2217	2262	2242	2274
W#9	2205	2122	2166	2150	2172
W#11	2216	2163	2212	2192	2213
W#13	2274	2214	2255	2227	2271
W#15	2300	2268	2329	2280	2309

06/25/07