Step 16. Nitride removal
|
Step |
Process |
Date |
Operator |
|
16.1 |
Photoresist strip Matrix 5 min O2 ashing Note: Matrix recipe was changed, temperature was lowered to 200oC, time increased to 5 min |
07/10/07 |
Pongracz |
|
16.2 |
Standard clean wafers Sink8 Piranha |
07/11/07 |
|
|
16.3 |
Nitride wet etch Sink7 - fresh phosphoric acid (3 bottles) @ 160 oC - water dripping 1 drop/10s to keep the liquid level - no HF dip before Monitor the etch rate after 30 min, 60 and 90 min (QDR, SRD) Measure oxide/nitride thickness with Nanoduv Oxide thickness after etching ~ 250 A, ~100 A on opened areas |
07/12/07 |
|
|
16.4 |
Pad oxide wet etch 5:1 BHF @ Sink8 until PCH dewet ~ 45 s |
07/12/07 |