Step 18. Pad oxidation/Nitride deposition

 

 

Step

 

Process

Date

Operator

 

18.1

 

 

TLC clean Tystar2  2TLCA

2 hours of cleaning

 

07/31/07

 

 

18.2

 

 

Std. clean wafers in Sink8 and then Sink6

Piranha clean

1/25 HF dip until dewet (~ 2.5 min)

 

Include NCH, PCH and dummy wafers for nitride etch

 

07/31/07

 

18.3

 

 

Dry oxidation in Tystar2          2DRYOXA

Target = 250A

1000 oC, 21 min.; N2 annealing 15 min

Measure oxide thickness with Nanoduv pr.1.:

 

T

C

F

R

L

NCH

356

370

374

366

380

Temperature didn’t stabilize in 3 hours, Alm Ack. Oxide is thicker.

 

07/31/07

 

 

18.4

 

 

Nitride deposition in Tystar9     9SNITA on test wafer – no particles

Deposition rate is apprx. 30A/min

 

Tystar9 9SNITA 73 min @ 800 oC

 

1st run: W#1-5 and W#11-15 and 1 dummy  (max 13 wfr in one run)

2nd run W#6-10 and PCH and 1 dummy

 

 

Measure nitride on oxide with Nanoduv pr.6:

 

 

T

C

F

R

L

W#1

2197

2205

2280

2253

2224

W#15

2073

2043

2065

2055

2077

test

2246

2223

2268

2256

2248

 

 

07/31/07

08/01/07