Step 20A. Nitride etch on W#1-5 & 11-15

 

 

 

 

Step

 

Process

Date

Operator

 

20A.1

 

 

Nitride etch in CENTURA-MXP

 

CMXP_CLEAN recipe on Si wafer

 

 

 

MXP_VAR_NIT with the following gas set up:

Ar=50, CH3F=20, O2=7, 50mtorr, 450W

Blank wafer etch apprx. 160 s, good uniformity but there are some hot spots

Endpoint well-defined, but selectivity to oxide is bad, etch rate for nitride 16A/s, for oxide 10A/s (1:1,5)

 

 

 

Etch Time [s]

W#1

135+15

W#2

150

W#3

150

W#4

145

W#5

140

W#11

145

W#12

145

W#13

130

W#14

145

W#15

140

 

 

 

08/06/07

Pongracz

 

 

20A.2

 

 

Measure pad oxide thickness after etch on Nanoduv using the Oxide on Si program:

 

 

C

T

W#1

310

287

W#2

297

313

W#3

310

331

W#4

305

304

W#5

309

309

W#11

281

289

W#12

295

281

W#13

300

321

W#14

299

255

W#15

306

302

 

 

08/06/07

20A.3

 

Photoresist removal

 

W#1, 3, 5, 11, 14                  Matrix          2.5 min

W#2, 4, 12, 13, 15                Technics-c    8 min       (Matrix was down)

 

 

08/07/07

20A.4

 

 

Sink8 10 min Piranha clean

 

 

08/07/07