Step 20B. Trench etch on W#6-10

 

 

 

 

Step

 

Process

Date

Operator

20B.1

 

Nitride etch in Centura-MxP

MXP_NITRIDE_OE recipe with endpoint loaded into MXP_VAR_NITRIDE

 

No detectable endpoint, signal begins to lower around 50s, allow 25s overetch

 

 

08/06/07

Pongracz

 

20B.2

 

Oxide etch in Centura-MxP

MXP_OXSP_ETCH 6s

08/06/07

 

20B.3

 

Si etch in Lam5

Target = 1.5 um

 

Using rec 5003

Verify the etch rate with a test wafer, 2x120 s gives 1.47 um

 

W#6-10 2x120 s etch, no overetch

 

 

 

 

08/08/07

20B.4

 

Photoresist removal

Matrix 2.5 min

 

08/09/07

20B.5

 

Trench depth measurement

ASIQ

 

 

Test structure depth @ Top [um]

Test structure depth @ Center [um]

Initial Mix&Match etch [um]

Trench depth

 

[um]

W#6

1.72

1.97

0.109

1.479

W#7

1.86

2.15

0.224

1.524

W#8

1.91

2.16

0.253

1.525

W#9

2.16

2.35

0.453

1.545

W#10

2.02

2.35

0.428

1.5

 

Note: 0.257 A of nitride and pad oxide

 

08/09/07