Step 31. Gate oxidation/Poly deposition

 

 

Step

 

Process

Date

Operator

 

31.1

 

 

TCA clean Tystar1  1TCA

8 hours of cleaning

Overnight run

 

09/18/07

 

 

31.2

 

 

Photoresist strip 2.5 min ashing in Matrix

Std. clean wafers in Sink8 and then Sink6

Piranha clean

1/25 HF dip until NCH, PCH dewet (~ 2.5 min)

 

Include NCH, PCH, Tox, Tpoly1, Tpoly2 and dummy wafers for poly etch

 

09/19/07

 

31.3

 

 

Dry oxidation in Tystar1          1THIN-OX

Include NCH, PCH, Tox, Tpoly1, Tpoly2

Target = 80 A

850 oC, 30 min.; N2 annealing @ 900 oC 30 min

 

SCA measurement on Tox:

 

T

C

F

R

L

Nsc

5.76e14

8.48e14

8.30e14

8.08e14

8.76e14

Qox

3.85e10

6.35e10

6.10e10

6.27e10

5.71e10

Dit

7.06e10

Below Res

Below Res

Below Res

Below Res

Ts

248

306

184

245

268

Rudolph ellipsometer to define oxide thickness:

 

T

C

F

R

L

Tox

76

78

77

76.5

72

 

 

09/19/07

 

31.4

 

 

Poly deposition in Tystar10    10SUPLYA

 

Target = 2500 A

 

Poly deposition in 2 runs

Including Tpoly1, Tpoly2

 

Measure poly on oxide with Nanospec special recipe:

 

 

T

C

F

R

L

Tpoly1

2584

2634

2709

2677

2584

Tpoly2

2330

2291

2297

2326

2282

 

 

09/19/07