This document provides general
guidelines for writing/updating lab manuals.
There should be 12 sections
available on the equipment lab manual. Each section may have several
subsections to it. All figures, including the equipment front view, parts, and
panels need to be displayed in Section 11 (Figures & Schematics). New
recipe generation/modification procedures, and details of recipes should be
outlined in Section 12 (Appendices). Use N/A (not applicable) under a section
that does not apply to your particular lab manual, however the section still
needs to be included in the chapter.
Ex.: Simply
place N/A under Statistical/Process Data (Section 7.0, listed
below), if there are no process data available on a particular tool.
Proper information needs to be
submitted along with your new or revised manual, to include; your name, manual
revision number, and a short note about the additional information/changes
introduced by your new/revised manual. The hard copy of the chapter (in
binders, in the lobby) has a list of revisions numbers, dates, authors and a
brief description of the changes or additions placed at the end of the
chapter. The web version has a Revision
History link placed in the Section 4.0 Applicable Document.. Always start
with revision 00 with new manual chapter (new write ups).
Make sure to use proper numbering
system in the manuals. This means all section/subsections in the lab manual
should have appropriate numbers in front of them (section X, subsection X.Y and
subsection to that will be defined as X.Y.Z, and so on).
Ex.: Tystar17 operating procedure (example), listed in Section 9.0,
below.
The equipment manual title should be
exactly the same in three places; equipment index list, at the beginning of the
manual (just below the chapter number, listed above), and in the title Section
1.0 of the lab manual, next.
1.0
Title
This section provides equipment title/name, which should be
identical to what is shown at the beginning of the chapter, right below the
chapter number. If it applies, specify MOS or Non-MOS clean nature of the equipment
(old lab tools excluded). The equipment computer login name should be listed
under the title
Ex.: Tystar17–
Non-MOS Low Stress Nitride LPCVD Furnace (tystar17)
2.0
Purpose
This section emphasizes the tool itself, and explains about the
tool type, its function/capability (PURPOSE), as well as available processes
(list). A short paragraph, nothing more than 4-5 lines in this section. A
reminder note on the tool or processes involved may also be included here.
Ex.: Tystar17
is a Non-MOS LPCVD furnace specially designed for depositing of Low Stress
Nitride Film, and by special staff permission for deposition of High
Temperature Oxide (HTO) at temperatures below 850°C, Stoichiometric nitride
(stress > 1000MPa), and Oxynitride films.
Note: Non-MOS wafers are not allowed in a MOS-clean nitride tube,
Tystar9.
3.0
Scope
This section focuses on the SCOPE of the lab manual itself,
briefly outlines what is covered in this particular manual chapter, including
recipe downloading, tool operation.
Ex.: This
document provides operational procedures
for Tystar17, recipe downloading from FCS10 furnace computer, and user-level
troubleshooting.
4.0
Applicable Documents
A Revision
Historyl linksto a table (mpiled by M. Leullier), which lists the revision
numbers, dates, authors, and a brief description of the changes or additions to
the chapter.
This section
should also list related/applicable documents, and vendor’s manual, if
available.
Ex.:
4.1 Chapter 5.0 of the lab manual (Tystar/Tylan
Furnaces Overview)
4.2
TYTAN Furnace System Manual, includes FCS10, TCU, MFS460 (Copy in
Office)
4.3
The “hazardous gas booklet” at the station, which explains the
safety concerns for the specific gases used in Tystar17 (includes MSDS).
5.0
Definitions & Process Terminology
Include terminology, definition of words specific to this manual.
Ex.:
5.1
MOS Furnace: This kind of furnaces is used to fabricate of MOS devices (IC), whose
performance can be greatly impacted by trace contaminants. Wafers processed in
MOS clean furnaces should be MOS compatible (IC device). Absolutely no metal
film in any MOS Furnace, except the MOS sintering furnace, which allows only Al
film.
5.2
Non-MOS Furnace: This kind of furnaces is used for Non-MOS
clean process (Non IC) such as MEMS or similar application (Tystar 17 is a
Non-MOS furnace).
5.3
LPCVD: Low Pressure Chemical Vapor Deposition.
6.0
Safety
This section includes safety issues specific to the tool and its
operator.
Ex.:
6.1
Tystar17 utilizes high electric power (high amperage)
heating elements. Do not touch high power electrical part inside panels of the
furnace.
6.2
Special care must be taken when the process aborts. In some special
circumstances, the tube may go into SPECIAL HOLD. In either case, inform
process staff immediately. The process staff will decide whether the process
can be continued, and/or take proper actions to remedy the situation. Do not
try to open the tube, since there may be toxic hazardous gases in it.
6.3
All new recipes have to be approved by the process staff, before
they can be used on any Tylan or Tystar furnaces.
6.4
Burn Hazard. Furnace cantilevers, boats, and wafers come out of the furnace
are very hot. Wear face shield when loading/unloading wafers. Proceed with
caution.
7.0
Statistical/Process Data
Refer to available data that can aid this
process to include Process Monitoring section of the Microlab
homepage.
Ex.:
7.1 Microlab web page.
7.2
Problem and comment section under equipment section of the wand.
7.3
Enable message for Tystar17.
8.0
Available Process, Gases, Process Notes
List processes, gases on the system, and
any useful process notes specific to the tool. Available processes may also be
listed in a table with specific parameters included.
Ex.:
Available Processes
8.1
Low Stress Nitride (LSN) Deposition
8.2
Stoichiometric Nitride Deposition
8.3
HTO and Oxynitride processes are being developed.
8.4
Please contact process staff for any customized processes you may
need.
Available Gases
8.5
Dichlorosilane/DCS (SiH2Cl2): Used as a
source of silicon in all Tystar 17 processes. Decomposition of DCS supplies
silicon for LSN, HTO, Nitride and Oxynitride films.
8.6
Ammonia (NH3): Used as a source of nitrogen in the
nitride process. NH3 is also used post deposition step to neutralize
HCl, which is a byproduct of DCS decomposition.
8.7
Nitrous Oxide (N2O): Used as a source of oxygen for
Oxynitride film deposition.
8.8
Nitrogen (N2): Used for process pressure control, tube
purging, and venting the tube back to atmospheric pressure.
Process Notes
8.9
The maximum temperature for Tystar17 is 850°C. Any attempt to
go above this temperature will result in damaging the O-rings used for the
vacuum sealing.
8.10 The standby
temperature for Tystar17 is 650°C. Avoid opening the tube for more than 30 minutes, which may
cause the tube temperature to drop significantly. In such case, the stress
accumulated in the films, deposited on the tube’s inner wall over the time, may
crack the tube.
9.0
Operating Procedure
List step by step operation in the order steps are carried out,
and in a clear/concise form. A short description may precede the steps. Please
make sure all sections have a number attached to them, which will make them
easier to identify, when the manual revision is in order.
Ex.:
9.1
Processing a Run (Loading recipe and wafers in Tystar17)
9.1.1
Venting the Tube
Tystar17, as well as all other LPCVD furnaces, runs STANDBY recipe
when in idle. The tube is under low pressure and needs to be properly vented
before you can open the door to load/unload wafers. If the tube is not vented,
the tube door is under atmosphere pressure force, which could be over a few
hundred pounds. Do not run any process recipes or try to open the tube door
manually, which will severely damage the furnace.
9.1.1.1
Enable TYSTAR17 on the WAND.
9.1.1.2
Make sure the STANDBYA.017 is running, and the process is
at WAIT step. If the VNTLK is ON, do not run any process, since there is a
problem with the vacuum pump system. Report on WAND.
9.1.1.3
Press “EVENT”, and the process should advance to BKF1 (Back Fill
#1). It takes 12 minutes for the venting process to finish. Afterwards, the
process ends and the furnace status changes to IDLE mode.
9.1.1.4
Check the SHUNK pressure on the lower display panel. If the
pressure is below 4 psi, report on the WAND. In this case, the SHUNT flow may
not be sufficient to prevent the particulates back-stream from the pumping
system to the process tube. Currently, we are monitoring the system to
determine the cut off pressure. Once the cut off pressure is determined, this
step will be included in the recipe for automatic operation.
9.1.2
Load and Run a Process Recipe
9.1.2.1
Make sure the process tube is properly vented.
9.1.2.2
Etc…
Note: Do
not leave the door open for more than 30 minutes, since it will create a large
temperature gradient in the tube and causes the thick film deposited on the
tube wall crack and create particulate problems. This may also crack the
process tube.
In case that a wafer is broken when loading, and you need to
obtain another clean one, press HOLD then BOATIN.
9.1.2.3 Etc…
9.1
General Information and Menu Key Pad Explanation
The Tystar17 is a five-zone LPCVD furnace. It operates as a
stand-alone unit that comprises of three modules: wafers load/unload module,
furnace/process tube module, and gas control module. It has it’s own computer,
FCS10, whose display panel and keypad are located on the left side of the wafer
load/unload module. The furnace operation is controlled by using the special
function buttons and a series of menu commands. The furnace temperature is
controlled by the TCU computer board that runs a proprietary PID algorithm. The
temperatures of all 5-furnace zones, i.e. Load, Load/Center, Center,
Source/Center, and Source, can be independently set. The process gases are
controlled by the MFS460 controller that has five hardware interlocks to insure
the safety of the operation.
9.2.1
Front Panel Special Function Buttons and Keypad Description (see Section 11.1 for the schematics of the front panel):
ABORT ***USE ONLY IN EMERGENGY***, e.g. fire, toxic gas leak. DO NOT use this
key to abort a recipe in progress. If you must stop a recipe, please contact a
super-user or process staff. They know the proper procedure for stopping
process/evacuating toxic gases from the furnace. This action requires password,
as well.
MENU Displays the main menu (See
Section 12.0 for the description of all menu commands)
Etc…
9.2.2
Commonly Used MENU Commands (press MENU button, then enter the
two letter commands)
DS Displays the current status of the
furnace. An example is shown in Section 11.2.
DH Displays the process history from the
last time the RUN button was pressed to present time.
DR Displays the contents of the
selected recipe.
GS Changes the Display to graphic mode. It
shows large characters with only selected process information. Use CMD button
to select process parameters to be displayed.
RL Loads process recipes. You will be
prompted to use the Arrow Keys to select a recipe. Afterward, press ENTER
button twice. The computer will prompt you to enter process parameters, if/when
needed.
9.2.3
Process Gas Flow Interlocks
When any of the following five interlocks
turns ON, no process gas, except nitrogen, will flow. If the ANTLK is on, the
nitrogen cannot flow either.
DNTLK Door Interlock. When ON, it indicates that
the tube door is not closed properly.
ANTLK Above Atmosphere Pressure Interlock. When
ON, the tube pressure is above 760 Torr.
BNTLK Below Process Pressure Interlock. When ON,
the process pressure is above 2 Torr.
VNTLK Vacuum Interlock. When ON, it indicates that
the vacuum system is not working.
GNTLK Gate Interlock. When ON, the gate valve
between the vacuum pump and process tube is closed.
9.3
Available Recipes
There are four process recipes available on this furnace. A staff
or super users should be consulted whenever a new recipe is needed. The John
Goldman computer is used for setting up new recipes. No one should ever upload
a recipe from the menu driven terminal to the John Goldman computer.
9.3.1
STANDBYA.017: Standby recipe. It purges with a small
amount of nitrogen through the process tube at low pressure to keep it clean.
9.3.2
LSNSTDA.017: Standard Low Stress Nitride LPCVD. The deposition condition is
fixed (100 DCS / 25 NH3 / 140 mTorr / 835°C). Enter only the
deposition time, based on your target film thickness, when loading recipe.
9.3.3
LSNVARA.017: Variable Low Stress Nitride LPCVD. The process gas flows and
pressure are specified by the user, while the temperature is fixed at 835°C. The recommended DCS
flow is 100 sccm, and you can reduce the NH3 flow to obtain lower
stress in the film.
9.3.4
STDNITA.017: Stoichiometric Nitride LPCVD. The process condition is fixed
(25DCS/75NH3/300mTorr/800°C). The stress can reach above 1000 MPa.
Note: Due to the current
setup, the actual pressure during deposition is around 200 mTorr.
10.0
Troubleshooting Guidelines
Include useful information that an operator can carry out to resolve
issues, and before filing a problem report.
Ex.:
10.1
The tube is at atmospheric pressure hold (step HLD2). In this case,
there is no film deposition on your wafers.
10.1.1
Cause The tube door has
not closed properly (DNTLK is ON).
Solution Make sure there is nothing on the track
blocking the movement of the boats.
Press EVENT three
times (The boats will move out, then in, and the process end).
Run the process
again. Press EVENT twice and the door will start moving in.
If the DNTLK is still
ON when recipe reaches BPP1, the system needs to be checked. Report the problem
on WAND.
10.1.2
Cause The tube failed leak
check. (No interlock is ON)
Solution Press EVENT three times (The boats will
move out, then in, and the process end).
Run the process
again. When the tube door is completely open, check the door flange and tube’s
open-end area for any debris that may result in leakage. Wipe the flange with
Technicloth. To prevent burn injury, pay extra attention on the hot spots of
the boat loader when doing so.
10.2
The tube is at abort hold (step APRG). In this case, the
process was aborted when the process gases were flowing. There is some film
deposition on your wafers.
10.2.1
Cause One of the process
gas flows was out of tolerance due to delivery system malfunction or gas
cylinder getting empty.
Solution Press MENU, then enter DH. Press ENTER
when prompted for input. The whole process history for this run will be
displayed. Find the root cause for the abort and report on the WAND.
Etc…
11.0
Figures & Schematics
Include figures and schematics of control panels, tool itself and
any displays that you wish to include for reference in the manual text.
Ex.:
11.1
Furnace Status Displayed on the FCS10 Front Panel (Idle state of
the standby recipe)
|
SIGNAL |
SETPT |
ACTUAL |
SIGNAL |
SETPT |
ACTUAL |
SIGNAL |
SETPT |
SIGNAL |
ACTUAL |
|
N2 DCS NH3 N2O Etc… |
5000 G 0 G 0 G 0 G |
5000 0 0 0 |
TEMPL TEMPLC TEMPC TEMPPSC TEMPS RMPRATE |
300.0 G 300.0 G 300.0 G 300.0 G 300.0 G 300.0 G |
298.0 299.9 301.9 302.1 296.0 0 |
BOATOUT BOATIN SHUNT SHUNKMKS |
OFF OFF OFF OFF |
LNTLK ANTLK BNTLK VNTLK GNTLK BPAUTO OUTLMT |
OFF OFF ON OFF OFF OFF OFF |
12.0
Appendices
Include procedures, command list, detail recipes, and any
information that you think will be helpful for this manual in here. This will
help maintain flow and continuity in Section 8.0 and 9.0 above, otherwise
burden with extra material that belongs to appendices.
Ex.:
FCS10 Furnace Computer Manu Commands
D - Display Sub-Menu
DE Equipment status
Etc…
The following sub-menu commands should not be used, but are stated
for completeness and to satisfy your curiosity.
H - Host computer Sub-Menu
HP Host Parameters
C - Configuration Sub-Menu
CC Contact Closures
CM MFS460 gases
CT TCU temperature
CS Station options
CA Alarm selection
X - Diagnostics Sub-Menu
XM Memory
utility
TI (change time, date) and PW (change password) have no
submenu. Don't use these commands.