Chapter 1.7
Material & Process Compatibility Policy
1.0
Title
Material &
Process Compatibility Policy
2.0
Purpose
This document is designed
to provide quick reference for material and compatibility policy in the
Microlab and will be reviewed by staff with updated information on a regular
basis. This information in addition to equipment manual chapters and should
provide answer to some of the frequently asked questions about material and
process compatibility in the Microlab. Microlab members are expected to contact
staff for any questions that may not be clear in their mind and/or not covered
by the pertinent equipment
lab manual chapters, including this one.
3.0
Scope
This chapter defines furnace pre-clean, metal
substrate/pyrex/borofloat glass restrictions in the Microlab. This is a quick
reference and by no means encompasses all the issues and concerns that may be
raised about MOS, Non-MOS and old lab process/operation. Microlab users should
adhere to specific guidelines spelled out in the operation manuals in addition
to the information provided here to make their final decision on "what is
allowed" and "what is not allowed" in the Microlab. As always
ask when in doubt. Process Engineering and/or technology manager should be
consulted for any issues or concerns you may have regarding material and
process compatibility, not covered in the lab manual chapters. Furthermore, any
new chemical and material introduced in the Microlab must be reviewed by staff
and Material Data Sheet (MSDS) form posted in the blue binders at the entrance
of the Microlab.
4.0
Applicable Documents
5.0
Definitions and Process Terminology
N/A
6.0
Safety
N/A
7.0
Statistical/Process Data
N/A
8.0
Available Process, Gases, Process Notes
Review specific
equipment manual in addition to the policies outlined in Section 9.0.
9.0
Material & Process Policy
(Cross-Contamination Prevention Measures)
9.1
VLSI / Furnace Restriction
No gold in any VLSI tools; no gold in the VLSI area including Bank
5 and Lam 3. Certain metals are allowed
in specific furnaces, as described below. If you do not see your metal described,
discuss with staff before proceeding.
9.2
Basic Wafer Cleaning Policy (furnace pre-clean for silicon and
100% quartz (fused silica) wafers)
New wafers receive 1 piranha clean. Photoresist coated wafers need
to have their PR stripped, then receive 2 piranha cleans (Non-MOS followed by
MOS). Metal wafers (wafers with metal layer/s on them) should never be exposed
to piranha, as it will attack the metal film and major contamination to the
sink will occur.
►
New 4" and 6" wafers must be cleaned in Sink 6 piranha
prior to loading into an MOS or Non-MOS furnace.
►
Resist coated 4" and 6" wafers with no metal layers on
them, must be stripped with PRS3000 or O2 plasma, and then cleaned
in Sink8 piranha followed by Sink6 piranha clean, prior to loading into a MOS
or Non-MOS furnace.
9.3
Specialized Procedures for Furnace Processing of Metal-Coated
Wafers
►
Only specific metals are allowed in specific non-MOS furnaces.
►
Do not attempt to clean any metal-coated wafers in any piranha.
►
Metal wafers (wafers with metal layer/s) 4” & 6” wafers may be
processed in specific non-MOS furnaces after being cleaned in the sink5 metal
clean bath followed by dump rinse (QDR) and SRD steps at Sink5, as well.
►
Resist coated 4" & 6" metal wafers (wafers with
metal layer/s) may be processed in specific non-MOS furnaces after resist
stripping with PRS3000 and/or O2 plasma, followed by cleaning in the
sink5 metal clean bath, then dump rinse (QDR) and SRD steps also at Sink5.
►
Non-MOS furnaces presently approved for processing of metal wafers
(wafers with metal layer/s) are:
- Tystar4 for annealing
- Tystar16 for amorphous or
poly silicon deposition
- Tystar17 for low stress
nitride and HTO deposition
- Tystar18 for sintering
process
- Tystar12 and tystar20 for LTO and poly-Ge/poly/SiGe film deposition, respectively.
9.4 Specialized
Procedures for Furnace Processing of Non-Quartz Glass Wafers
Fo For information on different types of
non-quartz glass wafers, see Process Module 31.
► Non-quartz glass wafers should Never be cleaned at Sink6.
►
New 4" and 6" non quartz glass wafers must be cleaned in
Sink 8 piranha prior to loading into a Non-MOS furnace.
►
Resist coated 4" and 6" non-quartz glass wafers must be
stripped with PRS3000 or O2 plasma, and then cleaned in Sink8
piranha prior to loading into a Non-MOS furnace.
►.
4” & 6” non-quartz glass
wafers are allowed in Tystar 4 (note most non-quartz glass wafers can not be
exposed to temperatures >550 C) in Tystar20 (dep temp < 450 C) and in Tystar16 (dep temp < 550 C) in a
special boat (see Process staff).9.5 Special Restriction on Etch Equipment
►
No metal etching is allowed in Lam1, Lam2, Lam4 and Lam 5. Use
Lam3 (metal etcher) for metal etch process, only.
►
No non-quartz glass wafer (e.g.,Pyrex or borofloat) etching is
allowed in Lam4 and Lam5.
Non-quartz glass wafers may be etched in P-therm. See Chapter 1.3, Process Module 31
for more information.
►
Do not grow C4F8 based polymers thicker than 1 micron in STS.
►
No metal hard masks are allowed in the STS. Oxide/nitride and
photoresist etch masks only.
9.6 Additional
Information
Tystar 20 has specifically been developed to enable deposition of
poly-Ge and poly-SiGe films on top of completed CMOS wafers. Therefore,
expected metal contaminants in Tystar 20 may include: Al, Al2%Si, Ti, W.
Furnace
Pre-cleaning Requirement Table
(Non-quartz
glass wafers (pyrex/borofloat) in Tystar16, Tystar12, and Tystar20, only)
|
|
Pre-Cleaning Required for
|
|||||||
|
New Si, SOI, Quartz Wafers |
PR Coated Si, SOI, Quartz Wafers |
New
Non-Quartz Glass Wafers |
PR
Coated Non-Quartz Glass Wafers |
Metal (blank film) |
PR Coated Metal Wafers (See tube specific notes) |
|||
Equip.
|
Description
|
|||||||
|
Tystar1 |
Atmos. Furnace (MOS) |
Sink6 |
Restricted
See
Tystar1 manual
|
NA |
NA |
NA |
NA |
|
|
Tystar2 |
Atmos. Furnace (MOS) |
Sink6 |
Wet
Strip or Matrix + Sink8 + Sink6 |
NA |
NA |
NA |
NA |
|
|
Tystar3 |
Atmos. Furnace (Non-MOS) |
Sink6 |
Wet
Strip or Matrix + Sink8 + Sink6 |
NA |
NA |
NA |
NA |
|
Tystar4
|
Atmos. Furnace (Non-MOS) |
Sink6 |
Wet
Strip or Matrix + Sink8 + Sink6 |
Sink8 |
Wet
Strip or Matrix + Sink8 |
Sink5 metal clean bath + Sink5 QDR/SRD *See Notes 1 and 2 |
Wet Strip or Matrix + Sink5 metal clean bath+ Sink5 QDR/SRD *See Notes 1 and 2 |
|
Tylan5
|
Atmos. Furnace (MOS) |
Sink6 |
Restricted |
NA |
NA |
NA |
NA |
|
|
Tylan6 |
Atmos. Furnace (MOS) |
Sink6 |
Restricted |
NA |
NA |
NA |
NA |
|
|
Tylan7 |
Atmos. Furnace (MOS) |
Sink6 |
Wet
Strip or Matrix + Sink8 + Sink6 |
NA |
NA |
NA |
NA |
|
|
Tylan8 |
Atmos. furnace (Non-MOS) |
Sink6 |
Wet
Strip or Matrix + Sink8 + Sink6 |
NA |
NA |
NA |
NA |
|
|
Tystar9 |
LPCVD Furnace (MOS) |
Sink6 |
Wet
Strip or Matrix + Sink8 + Sink6 |
NA |
NA |
NA |
NA |
|
|
Tystar10 |
LPCVD Furnace (MOS) |
Sink6 |
Wet
Strip or Matrix + Sink8 + Sink6 |
NA |
NA |
NA |
NA |
|
|
Tystar11 |
LPCVD Furnace (MOS) |
Sink6 |
Wet
Strip or Matrix + Sink8 + Sink6 |
NA |
NA |
NA |
NA |
|
|
Tystar12 |
LPCVD Furnace (Non-MOS) |
Sink6 |
Wet
Strip or Matrix + Sink8 + Sink6 |
Sink8 |
Wet
Strip or Matrix + Sink8 |
Sink5 metal clean bath + Sink5 QDR/SRD *See Notes 1 and 2 |
Wet Strip or Matrix + Sink5 metal clean bath+ Sink5 QDR/SRD *See
Notes 1 and 2 |
|
|
Tystar13 |
Atmos. Furnace (Non-MOS) |
Sink6 |
Wet
Strip or Matrix + | |||||