Tystar4

Non-MOS Clean Dry/Wet Oxidation and

Anneal Atmospheric Furnace  (4” and 6”)

(tystar4)

                                                                       

1.0         Title

Tystar4 Non-MOS Clean Dry/Wet Oxidation and Anneal Atmospheric Furnace (4” and 6”)

2.0         Purpose

Provide specific operation and process information for Tystar4 atmospheric Non-MOS clean (Dry/wet oxidation and anneal) furnace that is capable of processing both 4” and 6” wafers.

3.0         Scope

This chapter covers the general furnace description for Tystar4, TYCOM and furnace operation procedure, which includes process recipe loading, wafer loading/unloading, process status monitor, user level problem diagnosis, and wafer cleaning requirements.

4.0         Applicable Documents

4.1         Tylan Diffusion Furnace System Instruction Manual (copy in Office).

4.2         TYCOM 9900 Microprocessor Control System Instruction Manual (copy in Office)

4.3         Oxide Growth Chart, Semiconductor Technology Handbook (in the binder stored under TYCOM terminal)

4.4         Material Safety Data Sheets for TRANS-LC (trans 1, 2-Dichloroethene), Oxygen, Nitrogen, and Forming Gas H2/N2 (copies in the lobby).

5.0         Definitions & Process Terminology

5.1         ROP: Remote-Operation Panel

5.2         DNTLK: Door interlock, if door is not closed, no process gas can flow.

5.3         MOS Furnace: This kind of furnaces is used to fabricate MOS devices (IC), whose performance can be greatly impacted by trace contaminants. Wafers processed in this MOS furnace should absolutely be MOS compatible (IC device). Absolutely no metal film in any MOS Furnace, except the MOS sintering furnace, which allows only Al film.

5.4         Non-MOS Furnace: This kind of furnaces is used for Non-MOS clean process (Non IC) such as; MEMS or similar application.

5.5         Dry/Wet Oxidation: A high temperature oxidation (dry O2 or steam) process that oxidize the underlying silicon to forms silicon oxide. Dry oxidation uses oxygen for better process control. Wet oxidation uses both DI water and oxygen for fast reaction rate.

5.6         Annealing: A high temperature process that uses nitrogen to keep wafers in an inert atmosphere. Major applications for Tystar4 include diffusion and activation of lightly doped material, LTO densification, film stress release, and etc.

5.7         TLC Cleaning: A high temperature process that uses trans 1, 2-Dichloroethene and oxygen to clean the furnace quartz parts and interior, by removing possible metallic contaminants in these areas.

5.8         Furnace Flat Zone: An area inside the furnace with least temperature variation across it (best place to process wafers).

6.0         Safety

Follow general safety guidelines in the lab as well as the specific safety rules, listed below:

6.1         Electric Shock Hazard: Tystar furnaces utilize high electric power (high amperages) to generate heat. Do not open the side panels or touch the high power electrical parts in the furnace cabinet.

6.2         Chemical Hazard: TLC (trans 1, 2-Dichloroethene) is used for in-situ cleaning of quartz wares. TLC poses moderate health and high fire hazards. Please refer to the MSDS for first aid information.

6.3         Burn Hazard: Cantilevers, boats, and wafers coming out of the furnace are very hot. Wear face shield when loading/unloading wafers. Proceed with caution. Avoid touching any furnace quartz ware to prevent burning your hands, as well as contaminating the furnace. No flammable chemical, especially organic solvents are allowed at the load station, when the tube is open.

6.4        The process staff must check all new recipes, before they can be used on any Tystar furnace. Customized recipes should be stored on a separate diskette (user’s diskette), not on the standard furnace diskette(s).

7.0         Statistical/Process Data

7.1     Microlab web page: Process Monitoring/Furnaces.

7.2     Problem and comment section, under the equipment menu of the wand.

7.3     Enable message for individual Tystar furnace.

8.0     Available Process, Gases, Process Notes

8.1     Wafer Cleaning Requirements, before loading them into Tystar furnaces.

8.1.1    Photoresist on the wafers must be stripped first in PRS3000 bath (Sink5) or Technics-c or Matrix Asher, then cleaned in Sink8 (4”), the Non-MOS piranha bath(s). More cleaning may be required as per follows.

8.1.2    Wafers going into any furnace, regardless of their clean categories (MOS or Non-MOS clean), must see MOS clean, last. This means every wafer needs to be cleaned in Sink6 prior to getting loaded onto Tystar furnace(s). This rule also applies to start wafers (fresh out of the vendor’s box). Non-MOS wafers (MEMS, so on) require a Non-MOS clean step prelude to the above-mentioned MOS clean step.

8.1.3    No cleaning steps (NONE!) are necessary for wafer(s) just unloaded from one MOS furnace and going straight into another MOS furnace. Similarly, for wafer(s) just unloaded from one Non-MOS clean furnace and going straight into another Non-MOS furnace, NO INTERMEDIATE CLEANING STEP is required.

8.2         Wafers processed in a Non-MOS furnace or wafers which have gone through any Non-MOS processes, shall not be loaded into MOS furnaces. There is ABSOLUTELY NO EXCEPTION to this rule.

Available Processes

8.3         Tystar4: Non-MOS furnace for high temperature dry/wet oxidation, annealing, and wafer bonding.

8.4         TLC clean: TLC clean currently is not available on Tystar4.

Available Gases

8.5         Nitrogen (N2): Used to purge out room air and keep the process tube in an inert/clean atmosphere.

8.6         Oxygen (O2): Used for dry/wet oxidation process.

8.7         DI Water Vapor (H2OVAP): Used for wet oxidation.

8.8         Forming Gas (H2/N2): Not connected yet.

8.9         Argon (Ar): Not connected yet.

8.10      TLC (C2H2Cl2): Used for in-situ process tube cleaning.

8.11      Nitrogen Carrier (N2CARR): Used to carry TLC vapor to the process tube.

Special Process Notes

8.12      Tystar4 should be used for Non-MOS clean Dry/Wet oxidation and anneal processes. Process temperature higher than 1050ºC needs manager’s approval.

8.13      Tystar4 can be used for sintering process. Please, load the recipe (4SINT450/4SINT400) and wait for the furnace temperature to stabilize to the setpoint before running the process.

8.14      Wafers with metal film, which has melting temperature higher than 1500ºC may be allowed in Tystar4. Ask permission from Microlab management first (Katalin/Sia). Such wafers should  be cleaned in Sink5 PRS-3000 tank to strip off photoresist, then in the far right tank for pre-furnace clean.

9.0         Overall Furnace Operation

9.1         General Tystar Furnace Operational Guidelines

The Tystar Furnace consists of three basic modules: Load Station Module, Furnace Module, and Source Cabinet Module. Microlab users are permitted to access the Load Station Module, only (clean room area). Source cabinet and furnace module access are reserved for trained staff, and should not be touched by Microlab users (chase area). Failure to do so, could pose potential hazard(s).

The Load Station Module (in the clean room area) houses a laminar flow unit with HEPA filters for clean air distribution. A Boat Loader Unit opens/closes the furnace door and pulls-out/pushes-in the cantilever rods, upon which the boats are waiting to receive work wafers. The boat loader operation can automatically be controlled by a process recipe, or manually controlled by using the ROP’s command keys (see Section 9.3, below).

The Furnace Module consists of a quartz process tube, thermocouples, and heating element. Furnace Flat Zone is divided into three sections: Load, Center, and Source. The temperature is controlled through a PID electronic board (DTC). All the control parameters can be set in the process recipe. The volume of the quartz tube is approximately 45 liters. The process gas is flown into the tube from the “source” end, and vented through the holes in the “Load” end of the furnace.

The Source Cabinet Module contains several units: the Mass Flow Controllers (MFCs) for process gas flow regulation; the DI water vapor generator for steam generation; and the TLC bubbler for tube cleaning purpose. An electronic gas control system, referred to as MFS 460, controls/coordinates all MFCs and interlocks. This unit is designed to ensure safe furnace operation. Authorized staffs are the only people allowed to access this unit, which is located at the back of the furnace (service chase area).

9.2         TYCOM Terminal (loading recipes onto ROP and looking at status of run in progress)

The TYCOM Terminal controls and monitors all Tystar Furnace operational steps through process recipe(s). This unit consists of a CPU with two floppy disk drives, a CRT monitor and a keyboard. The auxiliary drive #1 is used for copying diskettes. This unit can copy the entire content of a diskettes, hence, care must be taken not to overwrite MIcrolab standard process diskette(s). Disk drive #2, on the right hand side of TYCOM terminal could be used for viewing or loading the recipes onto remote control panel unit in front of the tube. This drive is also used for single recipe copying/editing, and by temporarily storing the recipe content onto the computer memory, performing the edit task, and ultimately copying the recipe back onto the diskette in its final form. The standard recipe(s) for an individual furnace is stored on a designated floppy diskette, labeled with the furnace name, e.g. Tystar4. Each floppy disk has a special format and is assigned to a particular tube. Please consult with staff, whenever you need to generate customized recipe(s), specific to your need. Keep your recipes on a separate diskette, away from dedicated furnace diskette(s) and do not alter content of these dedicated furnace recipe diskette(s).

TYCOM Commands

TYCOM CPU only recognizes CAPITAL letters. You can also use the numerical keypad located on the right hand side of the keyboard, however, be aware that the [Enter] key on the numerical keypad is not recognized by the computer. This particular key can cause errors, when loading a recipe.

Various functions can be invoked through

TYCOM commands listed on the following table (1st column).

Commands

Function

Example

DI DI

Displays the recipe directory of the diskette in Drive #2.

 

DI RE “recipe name”

Displays the content of a recipe on the diskette in Drive #2.

DI RE 1SWETOXA

LO “recipe name” “#”

Load a recipe to a Tystar furnace.

LO 2SDRYOXA 2

DI ST “#”

Displays current status of a Tystar furnace (see Section 9.2.1).

DI ST 3

DI DE “#”

Displays the system configuration of a Tystar furnace.

DI DE 3

DI AL “#”

Displays previous process alarms of a Tystar furnace.

DI AL 4

 

9.2.1    Display Furnace Status

When you use DI ST commands, the CRT monitor displays the status of the Tystar furnace. This information is very important, especially for equipment problem diagnosis. The following example further explains the Display Furnace Status page, and any Tystar qualified users are expected to understand this display, as it is described below.

Snap shot of Tystar4 furnace status page is displayed below, where “2SWETOXA” recipe is loaded onto the tube, and the furnace is in an idle mode.

 

05/05/02

16:30:32

 

 

 

 

 

 

 

 

* = DISABLED

 

 

 

 

 

 

 

TUBE

STATUS

PROCID

 

ET

 

STEP

TIME-TO-GO

STEP ET

002

READY

2SWETOXA

 

00:00:00

 

0000

00:00:00

00:00:00

 

 

 

 

 

 

 

 

 

 

OUTPUTS

RELAYOUT

RELAYIN

INPUTS

 

 

N2CARR =

100.0

N2CARR =

ON

DNTLK =

OFF

TEMPL =

H

  752.3

0880

N2 =

3000.0

N2 = 

ON

H2ORDY =

OFF

TEMPC =

G

751.0

0726

H2/N2 =

.0

H2/N2 =

OFF

TAPERDY =

OFF

TEMPS =

L

747.2

0744

O2 =

.0

O2 =

OFF

N2PRSAL =

OFF

CALIBL =

 

752.1

 

AR =

.0

AR =

OFF

TLCALM =

OFF

CALIBC =

 

750.9

 

ANAO6 =

.0

H2OVAP =

OFF

BPIN =

ON

CALIBS =

 

747.3

 

SPEED =

.0

TLC =

OFF

BPOUT =

OFF

 

 

 

 

ANAO8 =

.0

H2OPUR =

OFF

H2OLEAK =

OFF

 

 

 

 

TEMPL =

750.0

H2OHTR =

OFF

 

 

N2CARR =

G

99.9

 

TEMPC =

750.0

H2OTAPE =

OFF

 

 

N2 =

G

3000.5

 

TEMPS =

750.0

CCOUT11 =

OFF

 

 

H2/N2 =

G

0.2

 

 

 

CCOUT12 =

OFF

 

 

O2 =

G

0.0