Rev. No.
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Date
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Authors
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Description
of Revision
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5.0 Tylan/Tystar
Furnaces - Overview
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00
01
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9/04
7/07
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J. Chang, S.
Parsa
S. Parsa
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N/A
Combined AP and LPCVD overview chapter - Major write up.
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5.1
Tystar1 MOS Clean Gate Oxidation Atmospheric Furnace
(4" and 6")
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|
00
01
02
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9/02
9/05
3/08
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J. Chang, S.
Parsa
J. Chang
J. Chang
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N/A
Changed cleaning
recipe to 1TCA, and minor changes.
Deleted
reference to sink9 in Subsections 8.1.1, 8.1.2 and 9.5.11. Added Section
8.14.
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5.2
Tystar2 MOS Clean Dry/Wet Oxidation and Anneal
Atmospheric Furnace (4" and 6")
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00
01
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5/02
8/06
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J. Chang, S.
Parsa
J. Chang
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N/A
Added
link to Process Monitoring/Furnaces. Modified cleaning procedure.
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5.3
Tystar3 Non-MOS Clean Dry/Wet Oxidation and Anneal
Atmospheric Furnace (4" and 6")
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00
01
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5/02
8/06
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J. Chang, S.
Parsa
J. Chang
|
N/A
Added
link to Process Monitoring/Furnaces. Modified cleaning procedure.
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|
5.4
Tystar4 Non-MOS Clean Dry/Wet Oxidation and Anneal
Atmospheric Furnace (4" and 6")
|
|
00
01
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5/02
8/06
|
J. Chang, S.
Parsa
J. Chang
|
N/A
Added link
to Process Monitoring/Furnaces. Modified cleaning procedure.
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|
5.5
Tylan5 MOS Clean Gate/Dry Oxidation and
Annealing Atmospheric Furnace (4” Only)
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5.6
Tylan6 MOS Clean Gate/Dry
Oxidation and Annealing Atmospheric Furnace (4” Only)
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5.7
Tylan7 MOS Clean Gate/Dry
Oxidation and Annealing Atmospheric Furnace (4” Only)
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00
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3/07
|
J. Chang
|
Initial
re-write
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5.9
Tystar9 MOS Clean Silicon Nitride (Si3N4) LPCVD Furnace
(4" and 6")
|
|
00
01
02
|
11/00
9/05
3/08
|
S. Parsa
J. Chang
J. Chang
|
N/A
Changes applicable to document online Chapter 5.0 plus
minor changes.
1)
Refer to Chapter 5.0 instead of 5.2 in Section 3.0.
2)
Deleted Section 9.2.7, Table in Appendix 2 and all
references to Recipe 9hstnbya.
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5.10
Tystar10 MOS Clean Polycrystalline Silicon LPCVD Furnace
(4" and 6")
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00
01
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4/01
8/06
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S. Parsa
J. Chang
|
N/A
Minor
revision of Section 5.0.
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5.11
Tystar11 MOS Clean LTO LPCVD Furnace (4" and
6")
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|
00
01
02
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12/00
9/05
3/08
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S. Parsa
J. Chang
J. Chang
|
N/A
Changed
reference to Chapter 5.0 in Application Document Section, and minor changes.
Renumbered
Section 5.10 ABORT… Inserted new Section 9.2.3.
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5.12 Tystar12
Non-MOS Clean LTO LPCVD Furnace (4" and 5")
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00
01
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4/01
8/06
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S. Parsa
J. Chang
|
N/A
Minor
revision of Section 5 and calibration temperature.
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5.13
Tystar13 Non-MOS Clean POCl3 Doping Furnace (4” and 6”)
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|
00
01
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12/03
5/07
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J. Chang
J. Chang
|
N/A
No
changes.
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5.14
Tystar14 Boron+ Doping Furnace
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|
00
01
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11/03
5/07
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J. Chang, S.
Parsa
J. Chang
|
N/A
Minor
changes in Sections 5.2, 9.1.2, 9.2.10, and 9.2.11.
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5.15
Tystar15 Non-MOS Polysilicon
Carbide LPCVD Furnace
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|
00
01
02
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7/03
8/06
5/07
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C. Roper
C. Roper
C. Roper
|
N/A
N/A
New deposition parameters for doped films.
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|
5.16
Tystar16 Non-MOS LPCVD Furnace
|
|
00
01
02
|
8/03
10/04
7/07
|
J. Chang
S. Parsa
J. Chang
|
N/A
N/A
Reviewed with minor
changes like user
term changed to labmember.
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5.17
Tystar17 Low Stress Nitride and High Temperature Oxide
LPCVD Furnace (Non-MOS)
|
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00
01
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5/03
4/07
|
J. Chang
J. Chang
|
N/A
Minor
changes in Sections 4.0, 8.0, 8.12, 9.2.4, and 9.3.4
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5.18
Tystar18 MOS Clean Aluminum Sintering Atmospheric
Furnace (4” and 6”)
|
|
00
01
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1/04
5/07
|
J. Chang
J. Chang
|
N/A
Changed
references to Chapter 5.0 in Section 4.1 and to Chapter 1.7 in Section 8.1.
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5.19
Tystar19 MOS Clean Si-Ge LPCVD
Furnaces (4" and 6")
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00
01
02
03
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3/01
4/01
3/06
12/06
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S. Parsa
H. Takeuchi
R. Hamilton
J. Chang
|
N/A
N/A
Modified
Sections 5.8, 8.2.1-4 to reflect the true composition of the gas diborane.
Modified
sections relating to the BCl3 and new recipes.
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5.20
Tystar20 Non-MOS Clean Si-Ge
LPCVD Furnace (4" and 6")
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00
01
02
03
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3/02
4/03
11/05
7/08
|
J. Chang
M. Wasilik,
C. Low
C. Low
J. Chang
|
N/A
N/A
N/A
Minor
revisions
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|
5.
30 Contamination Monitoring of MOS-Clean Furnaces
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|
00
|
9/05
|
S. Parsa,
J. Chang
|
Re-write
of the chapter as per current guidelines/common practices in the Microlab.
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5.31 Heatpulse1 - Rapid Thermal Annealing With Heatpulse 210T RTA System
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|
00
01
02
03
04
05
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12/02
1/03
1/03
1/06
12/07
3/08
|
K. Chan
K. Chan
S. Parsa
R. Hamilton
K. Chan
K. Voros
|
N/A
N/A
N/A
3.0 Scope section update; deletion
of Section 8.1.1 (no replacement); Sections 8.1.8 & 8.1.12 updated.
Separated Heatpulse1 and Heatpulse2 into
two separate chapters, updated temperature and anneal time specifications.
Changed all references to Heatpulse2 to
Heatpulse1 (Previous Chapter 5.31 archived and replaced by Chapter 5.32. New
Chapter 5.32 coming soon.)
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5.33
Heatpulse3 - MOS Clean Rapid Thermal Annealing System
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|
00
01
02
03
04
|
9/02
11/02
2/07
11/07
8/07
|
P. Ranade
K. Buchheit
J. Lai
R. Hamilton
L. Petho,
S. Parsa
|
N/A
N/A
N/A
Replaced she/he by the lab member in Section 6.1.
Added
Appendices, including procedure for determining correct temperature offset
for new and HF cleaned chambers. Updates in text..
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5.34
Heatpulse4 - MOS and Non-MOS Rapid Thermal Annealing System
|
|
00
|
2/07
|
J. Lai
|
N/A
|
|
5.35 Nanox Atmospheric Furnace for
Growing Carbon Nanotubes
|
|
00
01
|
10/05
5/06
|
Y.-C. Tseng
Y.-C. Tseng
|
N/A
N/A
|
|
5.36 YES Vacuum Oven
|
|
00
|
8/06
|
M. Daal,
K. Chan
|
Initial
revision of this document. YES Vacuum Oven
|
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5.40 Plasma Immersion Ion Implantation (PIII) System
|
|
00
01
02
03
|
7/06
1/07
2/07
8/07
|
D. Pestal
R.
Hamilton
D. Pestal
D. Pestal
|
N/A
Added info in Section 6. Safety.
Updated info in Section 6.1.
Extensive revisions.
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