Centura® MxP+
Chamber
(centura-mxp)
1.0
Title
Centura Platform System MxP+ Chamber Operation Manual
2.0
Purpose
The Centura MxP+ is a magnetically enhanced reactive
ion etch chamber typically used for etching oxide and nitride patterns in the
wafer.
3.0
Scope
The
Centura platform is a fully automated, multi-wafer capacity, multi-chamber
system. The system consists of a mainframe assembly (loadlocks, transfer
chamber, process chambers) and an associated set of remote support equipment
(RF power supplies, vacuum pumps, heat exchangers, computers). All wafer
handling and processing takes place in the mainframe assembly. Operator
interface takes place at the Centura computer terminal located at the front of
the system.
The etch process in
the MxP+ chamber is enhanced by applying a rotating magnetic field to the
plasma, which increases the residence time of free electrons in the plasma.
This causes more collisions between the free electrons and the gas molecules,
resulting in a more ionized and reactive gas. Four symmetric electromagnetic
coils are located around the perimeter of the etch chamber. Current flow
through the coils produces a rotating magnetic field. The strength of the
magnetic field is 0 gauss–100 gauss. The magnetic field lowers the DC bias
voltage potential between the chamber anode (gas distribution plate and the
chamber walls), and the chamber cathode by lowering the resistance of the
plasma. The coils are only turned on during processing.
The simple cathode
is the RF driven electrode inside the etch process chamber. The cathode
receives up to 1200 W (depending on the process) of 13.56 MHz RF power from the
RF generator in the remote frame. A high voltage polyimide
electrostatic chuck secures the substrate within the process chamber during the
process. The
ESC pedestal has helium channels cut into its face. The channels distribute
helium across the back of the wafer. This helium flow increases the heat
transfer from the wafer to the pedestal to prevent photoresist reticulation on
the wafer.
4.0
Applicable
Documents
4.1
MxP+ Dielectric Etch Centura Chamber
Manual (Applied Materials® document)
4.2
Silicon Etch Centura Mainframe
(Applied Materials® document)
4.3
Material
Safety Data Sheets for the following gases: CH3F, O2, CHF3,
C4F8, CF4, Ar, He, and N2 (copy in
Microlab lobby).
5.0
Definitions,
Process Terminology, Equipment Configuration
Acronyms and other terminology used in this document
5.1
AR:
Aspect Ratio (the height to width ratio of a feature)
5.2
Ch A:
Chamber A; designation of DPS DT silicon etch process chamber
5.3
Ch B:
Chamber B; designation of MxP oxide etch process chamber
5.4
Ch E: Chamber E; designation of the cool down chamber. Note: Ch E not used with current Centura configuration.
5.5
Ch F: Chamber F;
designation of flat finder or orienter
chamber.
5.6
CRT: Cathode
Ray Tube
5.7
DPS DT: Decoupled
Plasma Source Deep Trench platform. Note: DPS DT has a separate operations
manual, and a separate qualification is required to use this chamber.
5.8
DRIE:
Deep Reactive Ion Etch
5.9
DTCU:
Dome Temperature Control Unit
5.10 ESC: Electrostatic
Chuck
5.11 LLA: Loadlock A
5.12 LLB: Loadlock B
5.13 MFC Mass Flow
Controller
5.14 MxP: Oxide etch chamber
5.15 RF: Radio Frequency
5.16 SOI: Silicon On
Insulator
5.17 TGV: Throttled Gate
Valve
5.18 TMGM: Time
Multiplexed Gas Modulation
Equipment Configuration:
All
processes occur in the process chambers. There are two process chambers
currently configured to the Centura platform: Ch A (DPS DT), and Ch
B (MxP). The following describes other important components
currently configured to the Centura platform.
5.19 Dual Loadlock Chambers
The Centura has two aluminum loadlock chambers. They are
referred to as loadlock A (LLA) and loadlock B (LLB). Under
normal operating conditions, wafers that are to be processed in Ch A (DPS DT) should be loaded using LLA. Likewise, under normal operating
conditions, LLB should be used for loading wafers into Ch B (MxP). The
loadlock chambers serve the purpose of isolating the transfer chamber from
atmosphere during wafer cassette loading or unloading. Each loadlock has an
automatic platform that raises and lowers the wafer cassette in order to move
substrates to or from the transfer chamber. Each loadlock holds one blue 6-inch
wafer cassette with a 25-wafer capacity.
5.20
Flat Finder Chamber (Ch F)
The wafer orienter chamber; also
known as the flat finder chamber or Ch F. This chamber is used to locate
the major flat of the wafer so that it can be positioned in the process chamber
properly via the wafer handler robot arm. Wafers to be processed always go
through Ch F before being placed in any process chamber.
5.21
Transfer Chamber
The
transfer chamber isolates the process chambers from the loadlocks during wafer
transfer functions. It is also known as the buffer chamber, and essentially
“deals” wafers to the processing or flat finder chamber with the wafer handler
robot arm. The transfer chamber is held under vacuum and provides a clean
neutral environment for wafer transfer to take place.
5.22 Cool Down Chamber
(Ch E)
Cooldown chamber. Neither the DPS nor MxP
chambers need to make use of Ch E. Thus, this chamber is not used with
the current configuration, and is set to an “offline” state by default. (Note:
The cool down chamber is primarily used in conjunction with chambers that run
relatively high temperature processes such as LPCVD).
5.23 Heat Exchangers
Three separate HX 150 Neslab heat exchangers are used
for various cooling applications within the Centura platform. All of the heat
exchangers provide closed loop temperature control. Chilled DI water is used as
the coolant.
5.24 Gas Cabinet
The gas cabinet is located on the top rear of the
centura mainframe. The gas cabinet consists of the following components: MFCs,
transducers, tubing valves, regulators, filters, gas detectors, and safety
interlock switches. Process gas control and distribution to the process
chambers takes place via the gas cabinet. The gases configured for use with the
MxP+ are: CHF3, N2, CF4, Ar, C4F8,
O2, CH3F.
Software
Overview
System operations are accessible through the CRT monitor
screen by touching the lightpen to a field on the screen and pressing the
lightpen button. This activates the field. There is a hierarchy to the screens
and “detail” screens are reached through pulldown menus from the header line.
There are 8 main header line fields with the present Centura software/hardware
configuration (described below). A schematic of these headers and the pulldown
menu hierarchy are shown in Figure 2. Some of the
more User-relevant pulldown menu options that can be accessed by selecting
these headers are listed as follows:
5.25
System header - The more often used
options in this pulldown menu include the Login
\ Logout option, the Control System
screen option, and the Enter Lot Names
For screen option.
5.26
Wafer header - Among several other
options, this pulldown menu consists of the Monitor Wafers screen, the Monitor
Handler screen, and the Load \Unload
A option.
5.27
Ch A
header - This pulldown menu includes Monitor Process, Monitor
Chamber, and Monitor Gas Panel
screen options for the DPS DT process chamber.
5.28
Ch B header - This pulldown menu
consists of the Monitor Process, Monitor Chamber, and Monitor Gas Panel screen options for
the MxP process chamber.
Note: Ch A has a separate operations
manual, and a separate qualification is required to use this chamber.
5.29
Ch E header - This pulldown menu not
used with current configuration. Ch E is offline.
5.30
Ch F header - This pulldown menu includes the same
options as listed for the Ch A
pulldown menu.
5.31
Program header - The important User-relevant
options in this pulldown menu include the Wafer
Sequencing, Process Programs,
and Lot\Sequence Control screen
options.
5.32
Misc header - The most User-relevant option in
this pulldown menu is the Vacuum Service
Screen.
The Etch MxP+ Centura
system uses reactive gases that require careful handling. These gases are
toxic, poisonous, flammable, or caustic. The system also uses high voltage
electrical power, radio frequency (RF) energy, microwave energy, and magnetic
fields.
6.1 RF Power
This system, like many other dry etching systems, uses high-power radio-frequency (RF) energy to generate plasma. Avoid touching or otherwise disturbing RF cables at all times.
6.2
UV Radiation
Ultraviolet
light is generated in the etch chamber during normal operation. View port allows
the plasma and wafer to be observed. An ultraviolet shield provides eye
protection. The view port is recessed to allow endpoint detection.
6.3
Automatic Loadlock (LLA, LLB)
Users must be aware of moving loadlock doors and components
at all times. !!! Moving parts can crush or cut
!!! Be aware that the cassette handler in the loadlock swings
out and down automatically. Keep away from loadlock doors during automatic
loading or unloading. Keep away chairs or other items that would potentially
interfere with the loadlock doors or cassette handler at all times.
6.4
Emergency Stop Button
Red button located on front panel of tool. Pressing this button will cut power to the entire system. Use this button only if person or equipment is in harm’s way - e.g. earthquake, flood, or for any other dire circumstance.
7.0
Statistical/Process
Data
(under
construction…)
8.0
Available
Processes, Process Notes
8.1
The
Centura MxP+ is a six-inch compatible wafer system. Please contact process
staff regarding the potential
processing of a different size substrate at this time.
8.2
Standard Recipes: All of
the standard recipes on MXP are password protected. They are permanent, and may
not be modified. Contact staff with requests for new, permanent recipes
specialized for your application. Ideas
for new recipes and suggested improvements to current recipes are encouraged.
8.3
Variable Recipes: The recipe entitled MXP
VARIABLE is a User-modifiable recipe. For the time being, all parameters in
this recipe are open to modification by Users. Please contact staff about
questions that may arise concerning editing process parameters. Note that there
are no default parameters for the recipe MXP
VARIABLE. WYSIWYG!
Table 1 -
MxP+ Chamber Available Standard Recipes
|
Recipes à |
MXP-OXIDE-ETCH |
MXP-OXSP-ETCH |
MXP-NITRIDE-ETCH |
MXP-NITRIDE-ETCH |
MXP-NITSP-ETCH |
MXP-BARC-ETCH |
|
Recipe Purpose |
Standard
Oxide Etch |
Oxide
Spacer Etch |
Standard
Nitride Etch |
Standard
Nitride Etch Overetch Step |
Nitride
Spacer Etch |
Anti
Reflective Coating Etch |
|
Power (W) |
700 |
500 |
500 |
450 |
300 |
250 |
|
Pressure (mT) |
200 |
200 |
50 |
50 |
50 |
100 |
|
Ar flow |
150 |
120 |
110 |
50 |
90 |
- |
|
CF4 flow |
15 |
10 |
20 |
- |
45 |
75 |
|
CHF3 Flow |
45 |
50 |
15 |
- |
10 |
- |
|
CH3F Flow |
- |
- |
- |
50 |
- |
- |
|
C4F8 Flow |
- |
- |
- |