Chapter 7 – Etching Systems

Rev. No.

Date

Authors

Description of Revision

7.0  Lam Etchers Overview

00

01

02

03

6/01

7/04

9/05

7/08

J. Chang, S. Parsa

J. Chang

J. Chang

J. Chang

N/A

N/A

-   Gas line change requested by labmember.

-   Minor addition in Lam5 section.

7.1  Lam1 Silicon Nitride Etcher

00

01

02

8/01

7/04

2/06

J. Chang, S. Parsa

J. Chang, S. Parsa

S. Parsa

N/A

N/A

-  Addition of Section 8.14 in Process Notes.

7.2  Lam2 Oxide Autoetcher

00

01

12/01

2/06

J. Chang

S. Parsa

N/A

-   Addition of Section 8.13 in Process Notes..

7.3  Lam3 Aluminum RIE Etcher

00

01

02

12/01

11/05

2/06

J. Chang

S. Uddin

S. Parsa

N/A

-  Updates for Reactor chamber N2/O2 toggle switch addition.

-  Addition of Section 8.13 in Process Notes.

7.4  Lam4 Poly-Silicon Rainbow Etcher

00

01

02

03

04

3/03

11/04

12/05

2/06

11/06

J. Chang

J. Chang

S. Parsa

S. Parsa

J. Chang

N/A

N/A

-  Troubleshooting tips on gas stabilization failure added.

-  Addition of Section 8.22 in Process Notes.

-  Revised Section 10.4 on electrode temperature problem.

7.5  Lam5 Poly-Si TCP Etcher

00

10/07

J. Chang

-  Rewrite of the chapter

7.6  Centura MxP+ Chamber

00

01

02

8/04

6/05

6/08

M. Wasilik, A. Horvath

M. Wasilik

L. Petho

N/A

N/A

-  Added paragraph 9.3.5.

7.7  Centura Deep Silicon Etch DPS-DT

00

01

02

03

8/04

6/05

11/07

12/07

M. Wasilik

M. Wasilik

.M. Wasilik

M. Wasilik

N/A

N/A

N/A

-  Modified figures to reflect current results.

7.8  STS Poly-Silicon ICP Etcher

00

01

02

03

04

05

 

06

4/00, 11/00

5/01

1/02

7/03

5/05

5/06

 

9/08

J. Bustillo, M. Wasilik

M. Young

M. Wasilik

N. Chen

M. Wasilik

M. Wasilik

 

A. Szabo

N/A

N/A

N/A

N/A

N/A

-   Oxygen additive effect study submitted; HEX recipe updated

    to include O2.

-   Reviewed and defined the location of turbo controller.

           

00

01

02

03

04

05

 

 

06

5/01

5/04, 6/04

6/05

4/06

5/06

8/06

 

 

8/07

C. Emrich, J. Lo

R. Hamilton

M. Linan

S. Parsa

W. Flounders

R. Hamilton

 

 

W. Flounders

N/A

N/A

N/A

-  Updated current gas list and associated fields in the manual.

-  Addition of Section 7.0 (Anisotropic Silicon Etch recipe)

-  Added paragraphs in 6.0 Safety and Section 9.7 on the new

   water-flow interlock which prevents damage if the M&W chiller

   is off or fails.

1)   Added 8.1.3  Fluorocarbon Polymer Deposition Process in

8.1    Available Processes.

2)   Listed C4F8 as one of the connected gases in Section 8.2.

3)   Removed propane from the gas list.

7.10   Oxford RIE System

00

1/07

M. Huang

Minor revisions

7.11   Technics C Plasma Etching System

00

01

10/02

6/07

K. Chan

D. Queen

N/A

-    Removed some inconsistencies and the over emphasis 
    on the venting procedure after speaking to Bob Hamilton.

7.12  

 

 

 

 

7.13   Xenon Difluoride Etchning System

00

01

02

03

10/03

2/05

7/05

4/08

W. Flounders

W. Flounders

M. Wasilik

K. Arnold

N/A

N/A

N/A

-   Reviewed and added anecdotal information.

7.14   Ion Beam Milling with the Veeco Microetch System

00

01

02

 

03

9/02

10.5

2/06

 

2/07

X. Meng

R. Hamilton

R. Hamilton

 

J. Donnelly

N/A

-   Changes on 9.1 General Preparation.

-   Sections 9.1.4 and 9.1.5 deleted and replaced with

    new information on Cool Grease™.

-   Added one problem in Section 10.0 – Troubleshooting.

7.15   Hfvapor (Idonus HP VPE-100/150)

00

01

 

02

03

12/05

1/06

 

1/06

4/06

K. Jeong

N. Arellano

 

W. Flounders

K. Chan

N/A

-   Section 13.0 – Supplemental Notes: HF vapor etch mechanism

    added.

-   Section 6.0 – Safety revised.

-   Added PID calibrated parameter table and other minor changes.

9/08 - ML