6” (150 mm) Equipment Installation Timeline

1992

1996

1997

6” compatible furnace bank5 (4 stack):  4” tube for LSN (t18),

MEMS LTO (t20)

Electroglass 2001 – 6” autoprobe

1998

 

Si-Ge LPCVD for device – 6” compatible (t19)

432B sink upgrade for 6” tube cleaning

Leo SEM (6” upgrade)

Room 190 upgrade; (for Strasbaugh CMP)

1999

Matrix PR asher

Karl Suss aligner/wafer bonder

Strasbaugh CMP and wafer cleaner

Dry/wet oxidation (t17)

Rm 144 refurbished (thin films – Novellus)

GL4 renovation (for ASML, litho tools)

2000

Photomask developers

ASML wafer stepper; SVG 880 wafer track/develop; Ion Systems

CDSEM; DUV inspection microscope, DUVPR Stabilizer, sink9

Lam4: (nitride, poly etch) converted to 6”

Novellus: Al, Ti sputter

Furnace bank3 upgrade: LPCVD nitride, poly-Si, CMOS-LTO, MEMS-LTO

2001

Furnace bank1: atmospheric tubes (CMOS and MEMS)

CPA thin film sputterer

Heatpulse3 RTP

Lam1, 2, 3 – dual handling; cpa (Al, W, Ti, thin films) 6” tray

Sink5, 7, srd6, wafer cassettes, holders

Profilometer, Nanospec thin film measurement

Power distribution upgrade

HAZCOM upgrade

2002

Furnace bank4: POCl3, B+ diffusion, SiC LPCVD, MEMS Poly Si LPCVD

Quintel aligner

Sink3 (MEMS), critical point dryer (MEMS), cpd2

XeF2 etch (MEMS)

Exhaust lines

New N2 delivery line (1” diameter) to Microlab

2003

P5000 completed with O2 only

Edwards, Edwardseb3/thin film

Sinks6, 8; 2 srd dual stacks

ASIQ profilometer

Lam5 etcher

2004

Acid waste neutralization system installed.

P5000 TEOS/ozone process on line

GCAWS6 – 5X I-line stepper (6”)

SVG3 – thick resist wafer track

Centura deep Si etcher, oxide etch

Oxford2 – PECVD oxide, nitride

Table 3

12/10/04