6” (150 mm) Equipment Installation Timeline

1992 1996 1997	6” compatible furnace bank5 (4 stack): 4” tube for LSN (t18), MEMS LTO (t20) Electroglass 2001 – 6” autoprobe
1998	Si-Ge LPCVD for device – 6” compatible (t19) 432B sink upgrade for 6” tube cleaning Leo SEM (6” upgrade) Room 190 upgrade; (for Strasbaugh CMP)
1999	Matrix PR asher Karl Suss aligner/wafer bonder Strasbaugh CMP and wafer cleaner Dry/wet oxidation (t17) Rm 144 refurbished (thin films – Novellus) GL4 renovation (for ASML, litho tools)
2000	Photomask developers ASML wafer stepper; SVG 880 wafer track/develop; Ion Systems CDSEM; DUV inspection microscope, DUVPR Stabilizer, sink9 Lam4: (nitride, poly etch) converted to 6” Novellus: Al, Ti sputter Furnace bank3 upgrade: LPCVD nitride, poly-Si, CMOS-LTO, MEMS-LTO
2001	Furnace bank1: atmospheric tubes (CMOS and MEMS) CPA thin film sputterer Heatpulse3 RTP Lam1, 2, 3 – dual handling; cpa (Al, W, Ti, thin films) 6” tray Sink5, 7, srd6, wafer cassettes, holders Profilometer, Nanospec thin film measurement Power distribution upgrade HAZCOM upgrade
2002	Furnace bank4: POCl3, B+ diffusion, SiC LPCVD, MEMS Poly Si LPCVD Quintel aligner Sink3 (MEMS), critical point dryer (MEMS), cpd2 XeF2 etch (MEMS) Exhaust lines New N2 delivery line (1” diameter) to Microlab
2003	P5000 completed with O2 only Edwards, Edwardseb3/thin film Sinks6, 8; 2 srd dual stacks ASIQ profilometer Lam5 etcher
2004	Acid waste neutralization system installed. P5000 TEOS/ozone process on line GCAWS6 – 5X I-line stepper (6”) SVG3 – thick resist wafer track Centura deep Si etcher, oxide etch Oxford2 – PECVD oxide, nitride

Table 3

12/10/04